Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Tse-Lun Tsai"'
Publikováno v:
Solid State Ionics. 194:17-32
The variation of the oxygen content, xO, of synthetic fayalite (Fe2SiO4) single crystals was investigated thermogravimetrically at 1130 °C as a function of the oxygen activity, aO2 (= PO2/PO2° ≈ fO2/fO2° with PO2° ≈ fO2° = 1 bar ≈ 1 atm).
Publikováno v:
Solid State Ionics. :321-331
Discussed are: (i) experimental results for the variation of the oxygen content, the electrical conductivity and the iron tracer diffusion in fayalite, Fe 2 SiO 4 , (ii) the relationship between point defects, the deviation from stoichiometry, δ, in
Autor:
Rüdiger Dieckmann, Tse-Lun Tsai
Publikováno v:
Materials Science Forum. :399-402
Publikováno v:
Defect and Diffusion Forum. :1183-1188
Publikováno v:
Journal of Crystal Growth. 169:764-772
Good quality olivine single crystals,(Fe x Mg 1 − x ) 2 SiO 4 , have been successfully grown by the floating zone method using an image furnace. The double pass floating zone method was utilized to grow crystals with uniform composition along the g
Publikováno v:
Journal of Crystal Growth. 169:759-763
High quality single crystals of fayalite, Fe 2 SiO 4 , with well-developed morphology were successfully grown by the floating-zone method under a controlled atmosphere. Crystals,∼ 7–10mm in diameter and∼ 40–60mm in length, were grown along th
Autor:
M. Adamson, D. Zarr, J. Walls, C. Jesse, T. Brozek, C. Ryu, Tse-Lun Tsai, S. Nayak, A. Rogers
Publikováno v:
2001 IEEE International Reliability Physics Symposium Proceedings. 39th Annual (Cat. No.00CH37167).
The wafer level reliability (WLR) electromigration (EM) test is a quick test under very highly accelerated conditions using a parametric tester and prober on a full-sized wafer, which can provide cost effective and timely feedback on possible reliabi
Autor:
Rüdiger Dieckmann, Tse-Lun Tsai
Publikováno v:
MRS Proceedings. 369
A thermogravimetric study was conducted on synthetic olivines (FexMg1-x)2SiO4' prepared either by a conventional ceramic methodor a sol-gel method, to determine the nonstoichiometry and the point defect structure. Measurements were carried out as a f
Conference
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