Zobrazeno 1 - 10
of 44
pro vyhledávání: '"Tse-Heng Chou"'
Autor:
Tse-Heng Chou, 周澤亨
97
In this dissertation, we report the investigations of novel SiCN ultraviolet light detectors and LTPS (low temperature polysilicon) low cost hydrogen sensors. Four type structures including n-SiCN/p-PS/p-Si heterojunction, n-SiCN/p-SiCN homoj
In this dissertation, we report the investigations of novel SiCN ultraviolet light detectors and LTPS (low temperature polysilicon) low cost hydrogen sensors. Four type structures including n-SiCN/p-PS/p-Si heterojunction, n-SiCN/p-SiCN homoj
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/19081000956064163240
Publikováno v:
Sensors and Actuators A: Physical. 279:462-466
In this paper, we investigated the n-SiCN/p-PS/p-Si heterojunction for low cost and high temperature ultraviolet (UV) detecting applications. The crystalline SiCN film was deposited on p-(100) porous silicon (PS)/silicon substrate with rapid thermal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::623e8120a063bf42446d7f31d5d9da12
https://doi.org/10.1016/j.sna.2018.06.050
https://doi.org/10.1016/j.sna.2018.06.050
Autor:
Tse-Heng Chou
Publikováno v:
Sensors and Actuators A: Physical. 244:121-125
In this paper, we study of n-SiCN/p-Si heterojunction for low cost and high temperature ultraviolet (UV) detecting applications in details. The cubic crystalline SiCN film was deposited on p-Si (100) substrate using C 3 H 8 for carbon source by rapid
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f8bd57c977163968093718e8d525521f
https://doi.org/10.1016/j.sna.2016.04.029
https://doi.org/10.1016/j.sna.2016.04.029
Autor:
Tse-Heng Chou
Publikováno v:
Solid-State Electronics. 114:55-59
In this paper, we report the comparative study of both lateral n-SiCN/p-porous silicon (PS) and vertical n-SiCN/p-porous silicon (PS) heterojunctions for low cost and high temperature ultraviolet (UV) detecting applications. The cubic crystalline n-S
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7f5e96fc7ae4ffd30d3721f9620e14ba
https://doi.org/10.1016/j.sse.2015.07.010
https://doi.org/10.1016/j.sse.2015.07.010
Publikováno v:
Sensors and Actuators B: Chemical. 156:338-342
The Au/SnO 2 /n-LTPS MOS Schottky diode prepared on a glass substrate for carbon monoxide (CO) sensing applications is studied. The n-LTPS (n-type low temperature polysilicon) is prepared by excimer laser annealing and PH 3 plasma treatment of an amo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f15995e9b3a10ceba956284ebc1ba5ae
https://doi.org/10.1016/j.snb.2011.04.043
https://doi.org/10.1016/j.snb.2011.04.043
Publikováno v:
IEEE Sensors Journal. 11:150-154
In this paper, ultraviolet (UV) detecting performances of the n-i-p SiCN homojunction prepared on a p-type (100) silicon substrate under room and elevated temperatures were studied. We analyze the morphology and structure of the crystalline SiCN film
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::faaea3b2f32954470874576c8d3c116b
https://doi.org/10.1109/jsen.2010.2052799
https://doi.org/10.1109/jsen.2010.2052799
Autor:
Cheng-I Lin, Chii-Wen Chen, Chei-Chang Chen, Yen-Ting Chiang, Feng-Renn Juang, Tse-Heng Chou, Yean-Kuen Fang
Publikováno v:
IEEE Sensors Journal. 10:1337-1341
The p-strain Si/i- heterojunctions prepared by a rapid thermal chemical vapor deposition system on an n-Si substrate with back preferentially etched were developed for fast IR detecting applications. The stress induced by the p-strain Si/i- heterojun
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::482d440d56c1d4cffd9c8cb2b09b8e75
https://doi.org/10.1109/jsen.2009.2039132
https://doi.org/10.1109/jsen.2009.2039132
Autor:
Yen-Ting Chiang, Tse-Heng Chou, Kai-Chun Hsu, Feng-Renn Juang, Yean-Kuen Fang, Cheng-I Lin, Tzu-Chieh Wei, Chi-Ying Liang, Chii-Wen Chen
Publikováno v:
IEEE Sensors Journal. 10:1291-1296
Metal organic chemical vapor deposited Gallium nitride (GaN) thin films on (111) n-Si substrate with polycrystalline β-SiC (poly-SiC), cubic β-SiC (c-SiC), and porous β-SiC (PSC) buffer layers were characterized in detail using X-ray diffraction,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::25c1b6755c965d473d56359fac45bf1b
https://doi.org/10.1109/jsen.2009.2037310
https://doi.org/10.1109/jsen.2009.2037310
Publikováno v:
IEEE Transactions on Electron Devices. 57:2013-2018
The hydrogen detecting performances of Pd/n-LTPS Schottky diodes, with and without a TiO2 interface layer fabricated on glass substrates, were studied in detail. The n-LTPS film, an n-type low-temperature prepared polysilicon film, is formed by annea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c9e27a57951703bb6dd980994d2bf7e7
https://doi.org/10.1109/ted.2010.2051364
https://doi.org/10.1109/ted.2010.2051364
Autor:
Cheng-I Lin, Ta-Wei Kuo, Jin-Shu Shie, Mingtsu Ho, Tse-Heng Chou, Yean-Kuen Fang, Yen-Ting Chiang, Feng-Renn Juang, Kuen-Hsien Wu
Publikováno v:
IEEE Sensors Journal. 9:849-853
In this paper, we study of n-SiCN/p-PS/p-silicon heterojunction with porous silicon (PS) buffer layer for low-cost and high-temperature ultraviolet (UV) detecting applications in details. The electrochemical anodization and rapid thermal chemical vap
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::12fed6191ac659549cdbc8ee915eaba2
https://doi.org/10.1109/jsen.2009.2024050
https://doi.org/10.1109/jsen.2009.2024050