Zobrazeno 1 - 10
of 28
pro vyhledávání: '"Tse-En Chang"'
Publikováno v:
IEEE Transactions on Electron Devices. 45:1511-1517
We proposed a new measurement technique to investigate oxide charge trapping and detrapping in a hot carrier stressed n-MOSFET by measuring a GIDL current transient. This measurement technique is based on the concept that in a MOSFET the Si surface f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b6c4953d17600da3858ca1a8f2c652e
https://doi.org/10.1109/16.701482
https://doi.org/10.1109/16.701482
Publikováno v:
IEEE Transactions on Electron Devices. 45:1791-1796
An oxide trap characterization technique by measuring a subthreshold current transient is developed. This technique consists of two alternating phases, an oxide charge detrapping phase and a subthreshold current measurement phase. An analytical model
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::50feda7efc98e8826d768976ac84f50f
https://doi.org/10.1109/16.704380
https://doi.org/10.1109/16.704380
Publikováno v:
IEEE Transactions on Electron Devices. 42:738-743
An interface trap-assisted tunneling and thermionic emission model has been developed to study an increased drain leakage current in off-state n-MOSFET's after hot carrier stress. In the model, a complete band-trap-band leakage path is formed at the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d67bf5b2c06303e48a37e38e4ffc61b3
https://doi.org/10.1109/16.372079
https://doi.org/10.1109/16.372079
Publikováno v:
IEEE Transactions on Electron Devices. 41:1618-1622
A two-dimensional numerical simulation including a new interface state generation model has been developed to study the performance variation of a LDD MOSFET after a dc voltage stress. The spatial distribution of hot carrier induced interface states
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c1d70e83302d1eb512214a2cd2f6644c
https://doi.org/10.1109/16.310115
https://doi.org/10.1109/16.310115
Publikováno v:
IEEE Electron Device Letters. 17:398-400
A new technique to determine oxide trap time constants in a 0.6 /spl mu/m n-MOSFET subject to hot electron stress has been proposed. In this method, we used GIDL current as a direct monitor of the oxide charge detrapping-induced transient characteris
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::26002b200e5062af817e3dc83820430b
https://doi.org/10.1109/55.511587
https://doi.org/10.1109/55.511587
Publikováno v:
1996 Symposium on VLSI Technology. Digest of Technical Papers.
We have used a GIDL current in an n-MOSFET to monitor oxide charge detrapping directly for the first time. An analytical model accounting for the temporal evolution of the GIDL current was developed. Two oxide trap discharging mechanisms, electron de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a606f51284583b84114482c6ce85c20b
https://doi.org/10.1109/vlsit.1996.507862
https://doi.org/10.1109/vlsit.1996.507862
Publikováno v:
Proceedings of 1994 IEEE International Electron Devices Meeting.
An interface trap-assisted tunneling and thermionic emission model has been developed to study an increased drain leakage current in off-state MOSFET's after hot carrier stress. In the model, a complete band-trap-band leakage path is formed at the Si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c6cd3ab9e46e7038d3f6e9de4eaddbfa
https://doi.org/10.1109/iedm.1994.383440
https://doi.org/10.1109/iedm.1994.383440
Publikováno v:
1997 IEEE International Reliability Physics Symposium Proceedings. 35th Annual.
Oxide hole and electron trapping/detrapping characteristics in a hot carrier stressed n-MOSFET were investigated by monitoring the temporal evolution of band-to-band tunneling current. Both the hole and electron detrapping induced GIDL current transi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e7e752136b1f7c46cbc55d09bb3f3330
https://doi.org/10.1109/relphy.1997.584254
https://doi.org/10.1109/relphy.1997.584254
Publikováno v:
1995 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers.
Dominant drain leakage current mechanisms related to hot carrier stress generated interface traps are characterized in various n-MOSFET structures. Our study reveals that the lateral field induced band-trap-band tunneling is primarily responsible for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b36949d0c1f64581728cde8f59d51de8
https://doi.org/10.1109/vtsa.1995.524706
https://doi.org/10.1109/vtsa.1995.524706
Publikováno v:
Proceedings of International Reliability Physics Symposium RELPHY-96.
The field dependence of oxide charge detrapping time in a 0.6 /spl mu/m DDD n-MOSFET subject to hot carrier stress was characterized. A series of oxide trap charging and discharging conditions were performed using GIDL current as a direct monitor of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b4eb6e4bb14b7cbfa8b1ae63d8ca8860
https://doi.org/10.1109/relphy.1996.492071
https://doi.org/10.1109/relphy.1996.492071