Zobrazeno 1 - 10
of 607
pro vyhledávání: '"Tsatsul’nikov, A."'
Autor:
Nishidate, Y., Khmyrova, I., Kholopova, Yu., Polushkin, E., Zemlyakov, V., Tsatsul'nikov, A., Shapoval, S.
Publikováno v:
In Microelectronic Engineering 1 May 2019 212:37-41
Akademický článek
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Autor:
Kholopova, Yu., Khmyrova, I., Larkin, S., Zemlyakov, V., Egorkin, V., Tsatsul'nikov, A., Nishidate, Y., Shapoval, S.
Publikováno v:
In Microelectronic Engineering 25 April 2017 174:80-84
Autor:
Aladov, Andrei V., Valyukhov, Vladimir P., Demin, Sergei V., Zakgeim, Alexander L., Tsatsul'nikov, Andrei F.
Publikováno v:
In St. Petersburg Polytechnical University Journal: Physics and Mathematics March 2015 1(1):29-36
Autor:
Cherkashin, Nikolay, Sakharov, A., Nikolaev, A., Lundin, V., Usov, S., Ustinov, V., Grashchenko, A., Kukushkin, S., Osipov, A., Tsatsul’nikov, A.
Publikováno v:
Pis'ma v Zhurnal Tekhnicheskoi Fiziki / Technical Physics Letters
Pis'ma v Zhurnal Tekhnicheskoi Fiziki / Technical Physics Letters, 2021, 47 (10), pp.753-756. ⟨10.1134/S106378502108006X⟩
Pis'ma v Zhurnal Tekhnicheskoi Fiziki / Technical Physics Letters, 2021, 47 (10), pp.753-756. ⟨10.1134/S106378502108006X⟩
International audience
Autor:
W. V. Lundin, Pavel N. Brunkov, E. E. Zavarin, S. O. Usov, A. V. Sakharov, A. F. Tsatsul’nikov
Publikováno v:
Technical Physics Letters. 46:1211-1214
We have studied the growth of GaN layers by the metalorganic vapor phase epitaxy (MOVPE) on sapphire substrates at various reactor pressures, including ones above the atmospheric level. It is established that the epitaxial growth at higher pressures
Autor:
V. P. Evtikhiev, M. I. Mitrofanov, A. F. Tsatsul’nikov, W. V. Lundin, G. V. Voznyuk, M. A. Kaliteevski, S. N. Rodin
Publikováno v:
Semiconductors. 54:1682-1684
A new approach for calculating the ion dose spatial distribution of the focused ion beam is proposed. The approach is based on the analysis of the secondary electron microscopy image of the area irradiated by the focused ion beam.
Autor:
E. E. Zavarin, W. V. Lundin, A. F. Tsatsul’nikov, A. V. Sakharov, D. A. Zakheim, D. S. Arteev
Publikováno v:
Semiconductors. 53:1900-1903
The broadening of the spectral linewidth of the GaN/InGaN/GaN quantum wells caused by the random distribution of indium and gallium atoms in the cation sublattice was analyzed theoretically. The calculated values of the full width at half maximum of
Autor:
S. N. Rodin, A. V. Sakharov, G. V. Voznyuk, M. A. Kaliteevskii, A. F. Tsatsul’nikov, V. P. Evtikhiev, I. V. Levitskii, S. O. Usov, M. I. Mitrofanov, W. V. Lundin
Publikováno v:
Semiconductors. 53:2121-2124
The effect of annealing temperature and time on the luminescence intensity of the InGaN/GaN heterostructure subjected to ion beam etching was studied. We show that annealing at a temperature of 1100°C makes it possible to eliminate the radiation def
Autor:
W. V. Lundin, E. Yu. Lundina, A. V. Sakharov, A. F. Tsatsul’nikov, Pavel N. Brunkov, D. A. Zakgeim, E. E. Zavarin
Publikováno v:
Technical Physics Letters. 45:723-726
The morphology and electrical properties of doped semi-insulating gallium nitride (GaN) epilayers have been studied. It was found that doping-induced improvement of the insulating properties of GaN epilayers with increased level of doping with carbon