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pro vyhledávání: '"Tsatsul'nikov, A."'
Akademický článek
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Autor:
Nishidate, Y., Khmyrova, I., Kholopova, Yu., Polushkin, E., Zemlyakov, V., Tsatsul'nikov, A., Shapoval, S.
Publikováno v:
In Microelectronic Engineering 1 May 2019 212:37-41
Autor:
Kholopova, Yu., Khmyrova, I., Larkin, S., Zemlyakov, V., Egorkin, V., Tsatsul'nikov, A., Nishidate, Y., Shapoval, S.
Publikováno v:
In Microelectronic Engineering 25 April 2017 174:80-84
Autor:
Cherkashin, Nikolay, Sakharov, A., Nikolaev, A., Lundin, V., Usov, S., Ustinov, V., Grashchenko, A., Kukushkin, S., Osipov, A., Tsatsul’nikov, A.
Publikováno v:
Pis'ma v Zhurnal Tekhnicheskoi Fiziki / Technical Physics Letters
Pis'ma v Zhurnal Tekhnicheskoi Fiziki / Technical Physics Letters, 2021, 47 (10), pp.753-756. ⟨10.1134/S106378502108006X⟩
Pis'ma v Zhurnal Tekhnicheskoi Fiziki / Technical Physics Letters, 2021, 47 (10), pp.753-756. ⟨10.1134/S106378502108006X⟩
International audience
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::20ead43d461d01b43c87dee1de94c32f
https://doi.org/10.1134/s106378502108006x
https://doi.org/10.1134/s106378502108006x
Autor:
W. V. Lundin, Pavel N. Brunkov, E. E. Zavarin, S. O. Usov, A. V. Sakharov, A. F. Tsatsul’nikov
Publikováno v:
Technical Physics Letters. 46:1211-1214
We have studied the growth of GaN layers by the metalorganic vapor phase epitaxy (MOVPE) on sapphire substrates at various reactor pressures, including ones above the atmospheric level. It is established that the epitaxial growth at higher pressures
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fb06c08ab4b2dd20b7256500d35c9726
https://doi.org/10.1134/s1063785020120263
https://doi.org/10.1134/s1063785020120263
Autor:
E. E. Zavarin, W. V. Lundin, A. F. Tsatsul’nikov, A. V. Sakharov, D. A. Zakheim, D. S. Arteev
Publikováno v:
Semiconductors. 53:1900-1903
The broadening of the spectral linewidth of the GaN/InGaN/GaN quantum wells caused by the random distribution of indium and gallium atoms in the cation sublattice was analyzed theoretically. The calculated values of the full width at half maximum of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::32e5731a73c3c1d2863d378ce47cc0bd
https://doi.org/10.1134/s1063782619140033
https://doi.org/10.1134/s1063782619140033
Autor:
S. N. Rodin, A. V. Sakharov, G. V. Voznyuk, M. A. Kaliteevskii, A. F. Tsatsul’nikov, V. P. Evtikhiev, I. V. Levitskii, S. O. Usov, M. I. Mitrofanov, W. V. Lundin
Publikováno v:
Semiconductors. 53:2121-2124
The effect of annealing temperature and time on the luminescence intensity of the InGaN/GaN heterostructure subjected to ion beam etching was studied. We show that annealing at a temperature of 1100°C makes it possible to eliminate the radiation def
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7a50b1c58de65f4e6dbae1c7342d1ef2
https://doi.org/10.1134/s106378261912025x
https://doi.org/10.1134/s106378261912025x
GaN Selective Epitaxy in Sub-Micron Windows with Different Depths Formed by Ion Beam Nanolithography
Autor:
S. O. Usov, A. F. Tsatsul’nikov, V. P. Evtikhiev, I. V. Levitskii, A. V. Sakharov, M. A. Kaliteevski, S. N. Rodin, M. I. Mitrofanov, W. V. Lundin
Publikováno v:
Physics of the Solid State. 61:2335-2337
A significant difference in the growth mechanism of spatially closed structures of gallium nitride during selective growth in submicron windows with and without penetration into the GaN sublayer was demonstrated. The mechanisms of generation and deve
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::61a1fa7f626864db5ac09c9a227cee54
https://doi.org/10.1134/s106378341912045x
https://doi.org/10.1134/s106378341912045x
Autor:
G. V. Voznyuk, M. I. Mitrofanov, W. V. Lundin, A. F. Tsatsul’nikov, V. P. Evtikhiev, S. N. Rodin
Publikováno v:
Semiconductors. 53:2100-2102
The work presents experimental data of Ga+ focused ion beam etching of disc and ring patterns in Si3N4/GaN structure. The reasons for the difference in etching depth between the discs and the rings are described.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3f2a22f6ebd132a9d867ca3c5e8bd30a
https://doi.org/10.1134/s1063782619120170
https://doi.org/10.1134/s1063782619120170
Autor:
A. V. Sakharov, V. P. Evtikhiev, M. I. Mitrofanov, W. V. Lundin, G. V. Voznyuk, I. V. Levitskii, S. N. Rodin, A. F. Tsatsul’nikov
Publikováno v:
Semiconductors. 53:2118-2120
The effect of the growth temperature and the flow of trimethylgallium on the process of selective epitaxy of gallium nitride in windows of submicron size have been studied. The conditions under which homogeneous nucleation and coalescence of nuclei a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::45cab5f9400a93d6f9334357584c3318
https://doi.org/10.1134/s1063782619120157
https://doi.org/10.1134/s1063782619120157