Zobrazeno 1 - 10
of 57
pro vyhledávání: '"Tsai‐Sheng Gau"'
Autor:
Cheng-Dun Li, Ting-An Lin, Po-Hsiung Chen, Tsai-Sheng Gau, Burn-Jeng Lin, Po-Wen Chiu, Jui-Hsiung Liu
Publikováno v:
Nanoscale Advances; 6/7/2024, Vol. 6 Issue 11, p2928-2944, 17p
Autor:
Yu-Fang Tseng, Pin-Chia Liao, Po-Hsiung Chen, Tsai-Sheng Gau, Burn-Jeng Lin, Po-Wen Chiu, Jui-Hsiung Liu
Publikováno v:
Nanoscale Advances; 1/7/2024, Vol. 6 Issue 1, p197-208, 12p
Publikováno v:
SPIE Proceedings.
The inverse polarizing effect of Sub-Wavelength Metallic Gratings (SWMGs) is employed to improve the lithography performance by controlling the polarization. The SWMGs are intentionally created on the top surface of mask. Its polarization selectivity
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::573249b98be12500bd0d1c1d3217a411
https://doi.org/10.1117/12.2225127
https://doi.org/10.1117/12.2225127
Autor:
Hsiang-Lin Chen, Che-Yuan Sun, Chih-Ming Ke, Jia-Rui Hu, Shu-Chuan Chuang, Yu-Lung Tung, Woei-Bin Luo, Tsai-Sheng Gau, Hua-Tai Lin
Publikováno v:
SPIE Proceedings.
Immersion technology has successfully extends the application of ArF lithography in the semiconductor. However, as we further push the k 1 factor below 0.3, the patterning fidelities degrade significantly. In this paper, a novel method to quantify th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::12d27fbd765514adbb2369cbd2b711ae
https://doi.org/10.1117/12.2218346
https://doi.org/10.1117/12.2218346
Autor:
Wen-Chun Huang, Ru-Gun Liu, Fu-Sheng Chu, Yuan-Chih Chu, Chih-Shiang Chou, Tsai-Sheng Gau, Huang Hsu-Ting
Publikováno v:
SPIE Proceedings.
Aerial image measurement system (AIMS TM ) has been widely used for wafer level inspection of mask defects. Reported inspection flows include die-to-die (D2D) and die-to-database (D2DB) methods. For patterns that do not repeat in another die, only th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5e71a181a4051b028e31b775290d104a
https://doi.org/10.1117/12.2085113
https://doi.org/10.1117/12.2085113
Publikováno v:
SPIE Proceedings.
A traditional approach to construct a fast lithographic model is to match wafer top-down SEM images, contours and/or gauge CDs with a TCC model plus some simple resist representation. This modeling method has been proven and is extensively used for O
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f5816f82636324dbec7550e6f3d7308c
https://doi.org/10.1117/12.2045538
https://doi.org/10.1117/12.2045538
Publikováno v:
Acta Crystallographica Section A Foundations of Crystallography. 55:677-682
A dynamical calculation scheme that employs Cartesian coordinates with a z axis normal to the crystal surface to define polarization unit vectors and wavefields is applied to interpret the intensity distribution of crystal truncation rods for surface
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::164485433a9cbc11a2e819a9fc2ac67f
https://doi.org/10.1107/s010876739801695x
https://doi.org/10.1107/s010876739801695x
Publikováno v:
Surface Science. 384:254-259
A scheme based on X-ray dynamical theory is developed to analyze grazing-incidence X-ray diffraction data and to determine the interface structural morphology efficiently with a number of fitting parameters related to the phases and magnitude of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5462d3cad1feaaad1f0cd41cc0858d4f
https://doi.org/10.1016/s0039-6028(97)00228-8
https://doi.org/10.1016/s0039-6028(97)00228-8
Publikováno v:
SPIE Proceedings.
In image-based overlay (IBO) measurement, the measurement quality of various measurement spectra can be judged by quality indicators and also the ADI-to-AEI similarity to determine the optimum light spectrum. However we found some IBO measured result
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::10aec434445492e15fd237729c542b2e
https://doi.org/10.1117/12.2010570
https://doi.org/10.1117/12.2010570
Interference harmonics and rigorous EM spectrum analysis method for low-k1CD Bossung tilt correction
Publikováno v:
SPIE Proceedings.
This paper discusses the CD Bossung tilt phenomena in low-k1 lithography using interference harmonics and rigorous EM spectrum analysis. Interference harmonics analysis is introduced to explain the interaction of diffraction orders in the focal regio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eede305e3db2165f30448a781f17d8a6
https://doi.org/10.1117/12.2010599
https://doi.org/10.1117/12.2010599