Zobrazeno 1 - 10
of 67
pro vyhledávání: '"Ts Ivanov"'
Autor:
D P Lozano, M Mongillo, X Piao, S Couet, D Wan, Y Canvel, A M Vadiraj, Ts Ivanov, J Verjauw, R Acharya, J Van Damme, F A Mohiyaddin, J Jussot, P P Gowda, A Pacco, B Raes, J Van de Vondel, I P Radu, B Govoreanu, J Swerts, A Potočnik, K De Greve
Publikováno v:
Materials for Quantum Technology, Vol 4, Iss 2, p 025801 (2024)
The performance of state-of-the-art superconducting quantum devices is currently limited by microwave dielectric loss at different interfaces. α -tantalum is a superconductor that has proven effective in reducing dielectric loss and improving device
Externí odkaz:
https://doaj.org/article/f667fe9bc976494d925c93275af4b5ca
Autor:
J. Verjauw, R. Acharya, J. Van Damme, Ts. Ivanov, D. Perez Lozano, F. A. Mohiyaddin, D. Wan, J. Jussot, A. M. Vadiraj, M. Mongillo, M. Heyns, I. Radu, B. Govoreanu, A. Potočnik
Publikováno v:
npj Quantum Information, Vol 8, Iss 1, Pp 1-7 (2022)
Abstract As the superconducting qubit platform matures towards ever-larger scales in the race towards a practical quantum computer, limitations due to qubit inhomogeneity through lack of process control become apparent. To benefit from the advanced p
Externí odkaz:
https://doaj.org/article/71bd3002224e4daab1fe7e4c94ec8979
Autor:
Stefan Kubicek, N. I. Dumoulin Stuyck, Y. Canvel, Laurent Souriau, Bogdan Govoreanu, M. Shehata, Clément Godfrin, Iuliana Radu, Danny Wan, Rohith Acharya, George Simion, R. Li, Jeroen Verjauw, Bertrand Parvais, S. Narasimhamoorthy, Antoine Pacco, Ts. Ivanov, Boon Teik Chan, S. Van Winckel, Massimo Mongillo, Steven Brebels, Sebastien Couet, A. Grill, A. Potocnik, J. Jussot, Fahd A. Mohiyaddin, A. Elsayed, Jan Craninckx, X. Piao
Publikováno v:
Scopus-Elsevier
VLSI Circuits
VLSI Circuits
Building quantum computers requires not only a large number of qubits with high fidelity and low variability, but also a large amount of analog and digital components to drive the qubits. Larger arrays of solid-state qubits with high fidelity and low
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::718648348332c1b5f373ceaa17a51108
https://hdl.handle.net/20.500.14017/59d65559-85f8-47bf-8752-574c58dc6fd5
https://hdl.handle.net/20.500.14017/59d65559-85f8-47bf-8752-574c58dc6fd5
Autor:
Ts. Ivanov, Stefan Kubicek, N. I. Dumoulin Stuyck, J. Jussot, Iuliana Radu, R. Li, Boon Teik Chan, George Simion, M. Shehata, Fahd A. Mohiyaddin, A. Elsayed, Y. Canvel, Ludovic Goux, Clément Godfrin, Bogdan Govoreanu
We report on a flexible 300 mm process that optimally combines optical and electron beam lithography to fabricate silicon spin qubits. It enables on-the-fly layout design modifications while allowing devices with either n- or p-type ohmic implants, a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b0b7d81f9076f0ad84eb7b9064138379
http://arxiv.org/abs/2102.03929
http://arxiv.org/abs/2102.03929
Autor:
A. Thiam, Jeroen Verjauw, M.M. Heyns, Antoine Pacco, Ts. Ivanov, Sebastien Couet, Danny Wan, Bogdan Govoreanu, Fahd A. Mohiyaddin, Rohith Acharya, X. Piao, Massimo Mongillo, A. Vanleenhove, George Simion, A. Potocnik, Laurent Souriau, J. Jussot, Iuliana Radu, J. Swerts
The coherence of state-of-the-art superconducting qubit devices is predominantly limited by two-level-system defects, found primarily at amorphous interface layers. Reducing microwave loss from these interfaces by proper surface treatments is key to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::aa1ee55e1bcdf8b08d547209f1f0b281
http://arxiv.org/abs/2012.10761
http://arxiv.org/abs/2012.10761
Autor:
Bogdan Govoreanu, Ts. Ivanov, M. Shehata, Iuliana Radu, Stefan Kubicek, Alessio Spessot, J. Jussot, Florin Ciubotaru, George Simion, Fahd A. Mohiyaddin, A. Elsayed, Philippe Matagne, R. Li, Clément Godfrin, Boon Teik Chan, N. I. Dumoulin Stuyck
Publikováno v:
2020 IEEE International Electron Devices Meeting (IEDM).
We propose a solid scalable design and operation methodology for 1-D spin qubit arrays with nanomagnets. Each qubit in the array is independently addressable, with single and 2-qubit quantum gate fidelities that exceed 99% in the presence of realisti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a28f795b4c89455b791af88d2cf52997
https://doi.org/10.1109/iedm13553.2020.9372067
https://doi.org/10.1109/iedm13553.2020.9372067
Autor:
Alessio Spessot, Geert Eneman, Stefan Kubicek, Ts. Ivanov, Fahd A. Mohiyaddin, F. M. Bufler, N. I. Dumoulin Stuyck, George Simion, R. Li, Boon Teik Chan, Bogdan Govoreanu, J. Jussot, I. P. Raduimec, Florin Ciubotaru, Jae Woo Lee, Philippe Matagne
Publikováno v:
2019 IEEE International Electron Devices Meeting (IEDM).
In this paper, we combine multiphysics simulation methods to assemble a comprehensive design methodology for silicon qubit devices. Key device parameters are summarized by modeling device electrostatics, stress, micro-magnetics, band- structure and s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5189aedf7b004d7f8060bda1c8af1d98
https://doi.org/10.1109/iedm19573.2019.8993541
https://doi.org/10.1109/iedm19573.2019.8993541
Autor:
Stefan Kubicek, R. Li, Iuliana Radu, Bogdan Govoreanu, Ts. Ivanov, Jae Woo Lee, George Simion, Fahd A. Mohiyaddin, N.I. Dumoulin-Stuyck, J. Jussot, Boon Teik Chan, Dan Mocuta
Publikováno v:
2019 Silicon Nanoelectronics Workshop (SNW).
We discuss the key features of a 300mm integrated Silicon MOS platform to serve as a basis for spin-qubit device exploration. The process yields structures with a pitch of 100nm and below, without bearing the complexity of advanced optical lithograph
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4365845b244e26bd948811c3fa77b3e2
https://doi.org/10.23919/snw.2019.8782903
https://doi.org/10.23919/snw.2019.8782903
Publikováno v:
Superlattices and Microstructures. 88:711-722
Inter-band optical transitions in InAs submonolayer and Stranski-Krastanov quantum dot (QD) in quantum well (QW) nanostructures are studied by means of room temperature surface photovoltage (SPV) spectroscopy taking advantage of its high sensitivity
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f0028a52ca09294354f2981c07890cf4
https://doi.org/10.1016/j.spmi.2015.10.036
https://doi.org/10.1016/j.spmi.2015.10.036
Autor:
E. Camerotto, N. Pinna, Anabela Veloso, Siva Ramesh, Alireza Alian, Ts. Ivanov, Paola Favia, D. Lin, S. El Kazzi, P. Lagrain, Nadine Collaert, Rita Rooyackers, A. Sibaja-Hernandez, Alexey Milenin, V. Putcha, K. De Meyer
Publikováno v:
2017 IEEE International Electron Devices Meeting (IEDM).
We report high performance, dry etched In 0.53 Ga 0.47 As vertical nanowire and vertical nanosheet devices, fabricated using a VLSI compatible process flow. Scaling the effective-oxide-thickness in combination with (NH4)2S channel treatment and formi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::92b72a44397e7fbdb10511c553a0e76b
https://doi.org/10.1109/iedm.2017.8268406
https://doi.org/10.1109/iedm.2017.8268406