Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Trung Tran Tuan"'
Autor:
Viktor Stempitsky, Trung Tran Tuan, Maryia Baranava, Dao Dinh Ha, Dzmitry Hvazdouski Vladislav Volcheck
Publikováno v:
2020 International Conference on Advanced Technologies for Communications (ATC).
The GaN high electron mobility transistor (HEMT) thermal characteristics were evaluated employing an integrated approach based on the combined use of ab initio (first-principles) and device simulations. The necessity of utilizing such a method arises
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::90a87d22f6f3b5c391e26646a95849de
https://doi.org/10.1109/atc50776.2020.9255446
https://doi.org/10.1109/atc50776.2020.9255446
Publikováno v:
2019 International Conference on Advanced Technologies for Communications (ATC).
The effect of the presence of iron-induced acceptor centers in the gallium nitride high electron mobility transistor is studied using device physics simulations at elevated temperatures (up to 600 K), as a lattice heat flow equation is solved self-co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9786de43dbdaeb3ccbafdb26f3cb445c
https://doi.org/10.1109/atc.2019.8924506
https://doi.org/10.1109/atc.2019.8924506
Publikováno v:
2016 International Conference on Advanced Technologies for Communications (ATC); 2016, p264-267, 4p
Publikováno v:
2015 International Conference on Advanced Technologies for Communications (ATC); 2015, p511-515, 5p
Autor:
Speransky, Dmitry, Trung, Tran Tuan
Publikováno v:
Proceedings of the 19th International Conference Mixed Design of Integrated Circuits & Systems - MIXDES 2012; 1/ 1/2012, p66-68, 3p