Zobrazeno 1 - 10
of 103
pro vyhledávání: '"Trudo Clarysse"'
Autor:
Romain Ritzenthaler, Aftab Nazir, Tom Schram, Trudo Clarysse, Pierre Eyben, Alessio Spessot, Wilfried Vandervorst
Publikováno v:
IEEE Transactions on Electron Devices. 61:2633-2639
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a1726c9803d31e9b4136698dd9827d8
https://doi.org/10.1109/ted.2014.2327759
https://doi.org/10.1109/ted.2014.2327759
Autor:
Jay Mody, Pierre Eyben, Hugo Bender, Aftab Nazir, Trudo Clarysse, Kristin De Meyer, Andreas Schulze, Wilfried Vandervorst, Geert Hellings
Publikováno v:
Solid-State Electronics. 74:38-42
In this paper we present a procedure and software allowing to predict and understand device performance by incorporating two dimensional (2D)-carrier profiles obtained from high vacuum scanning spreading resistance microscopy (HV-SSRM) into a device
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ae2ab8658fd9c3e329108812e205cf37
https://doi.org/10.1016/j.sse.2012.04.009
https://doi.org/10.1016/j.sse.2012.04.009
Autor:
Federica Gencarelli, Osamu Nakatsuka, Wilfried Vandervorst, Benjamin Vincent, A Jensen, Yosuke Shimura, Roger Loo, Matty Caymax, Shotaro Takeuchi, Trudo Clarysse, Shigeaki Zaima, Dirch Hjorth Petersen
Publikováno v:
Thin Solid Films. 520:3206-3210
We have investigated the Ga and Sn content dependence of the crystallinity and electrical properties of Ga-doped Ge1-xSnx layers that are heteroepitaxially grown on Ge(001) substrates. The doping of Ga to levels as high as the solubility limit of Ga
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::05740d84fdb5df38937a18ab694fda06
https://doi.org/10.1016/j.tsf.2011.10.084
https://doi.org/10.1016/j.tsf.2011.10.084
Autor:
Pierre Eyben, Lauri Olanterä, Kai Arstila, Trudo Clarysse, Wilfried Vandervorst, Thilo Werner, Andreas Schulze, Thomas Hantschel
Publikováno v:
Diamond and Related Materials. 20:655-659
Pyramidal tips made from boron doped diamond have become the ultimate choice for electrically measuring semiconductor device structures in electrical atomic force microscopy (AFM). An advanced measurement setup with diamond probing units directly int
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::171f3b78e134907ff7e44cf570888c67
https://doi.org/10.1016/j.diamond.2011.03.005
https://doi.org/10.1016/j.diamond.2011.03.005
Autor:
Geert Eneman, Geert Hellings, Kristin De Meyer, Brice De Jaeger, Erik Rosseel, Ole Hansen, Dirch Hjorth Petersen, Trudo Clarysse, Peter Folmer Nielsen, Thomas Hoffmann, Wilfried Vandervorst, Eddy Simoen
Publikováno v:
Microelectronic Engineering. 88:347-350
Published results on Ge junctions are benchmarked systematically using R"S-X"J plots. The electrical activation level required to meet the ITRS targets is calculated. Additionally, new results are presented on shallow furnace-annealed B junctions and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::77db00b39e513272dd1d849c5e9bbfc2
https://doi.org/10.1016/j.mee.2010.11.014
https://doi.org/10.1016/j.mee.2010.11.014
Autor:
Thomas Hantschel, Kris Vanstreels, Wilfried Vandervorst, Geoffrey Pourtois, Kiroubanand Sankaran, Jay Mody, Pierre Eyben, Liangchi Zhang, Trudo Clarysse, Francesca Clemente, Edouard Duriau, Kausala Mylvaganam
Publikováno v:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 28:401-406
Within this paper, the authors propose a refined high vacuum scanning spreading resistance microscopy (HV-SSRM) electromechanical nanocontact model based on experimental results as well as molecular dynamics (MD) simulation results. The formation und
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8286148dcb27f135684f81aeb1474f74
https://doi.org/10.1116/1.3273895
https://doi.org/10.1116/1.3273895
Autor:
Hugo Bender, Olivier Richard, Trudo Clarysse, Jean-Luc Everaert, Akira Sakai, Matty Caymax, Ngoc Duy Nguyen, Lijun Yang, Wilfried Vandervorst, Jozefien Goossens, Roger Loo, Shotaro Takeuchi, Jing-Cheng Lin, Alain Moussa, Erik Rosseel, Shigeaki Zaima
Publikováno v:
Thin Solid Films. 518:S48-S52
We evaluated the combination of vapor phase doping and sub-melt laser anneal as a novel doping strategy for the fabrication of source and drain extension junctions in sub-32 nm CMOS technology, aiming at both planar and non-planar device applications
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7199c006d6c9aa089fadc8b38addce35
https://doi.org/10.1016/j.tsf.2009.10.053
https://doi.org/10.1016/j.tsf.2009.10.053
Autor:
G. Merklin, Janusz Bogdanowicz, Erik Rosseel, Nick E. B. Cowern, Nick Bennett, Rong Lin, Dirch Hjorth Petersen, Peter Folmer Nielsen, Jozefien Goossens, Trudo Clarysse, Ole Hansen, Alain Moussa, Wilfried Vandervorst
Publikováno v:
Materials Science and Engineering: B. :24-30
In order to fabricate carrier profiles with a junction depth (∼15 nm) and sheet resistance value suited for sub-32 nm Si-CMOS technology, the usage of sub-melt laser anneal is a promising route to explore. As laser annealed junctions seem to outper
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dda4f8d88eac8dad0ed1a1ca10d18c97
https://doi.org/10.1016/j.mseb.2008.09.038
https://doi.org/10.1016/j.mseb.2008.09.038
Autor:
Wilfried Vandervorst, Francesca Clemente, Rudolf Srnanek, Guy Brammertz, Damian Radziewicz, B. Sciana, R. Kinder, Marc Meuris, Jozefien Goossens, Zhiqiang Li, Pierre Eyben, Trudo Clarysse, D. Vanhaeren
Publikováno v:
Materials Science in Semiconductor Processing. 11:259-266
As CMOS is approaching the 22 nm node, the importance of high-mobility materials such as Ge and GaAs is rapidly increasing. For the timely development of these new technologies accurate dopant and carrier-profiling solutions for source-drain extensio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::67d5f935b3ba89c7afdf7c63eb378d64
https://doi.org/10.1016/j.mssp.2008.11.010
https://doi.org/10.1016/j.mssp.2008.11.010
Autor:
Jozefien Goossens, Gijs Brouwers, Marie-Laure David, Alessandra Satta, Frédéric Pailloux, Marc Meuris, Eddy Simoen, Trudo Clarysse, Brigitte Parmentier, Wilfried Vandervorst
Publikováno v:
Materials Science in Semiconductor Processing. 11:368-371
The impact of the Ge pre-amorphization conditions on shallow B profiles, resulting from a 1 keV implantation in n-type Ge and a 500 °C 1 min rapid thermal anneal, is investigated. In general, an increase of the sheet resistance with lower Ge energy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3ac669775221b3e70b390ec6ff5be256
https://doi.org/10.1016/j.mssp.2008.09.006
https://doi.org/10.1016/j.mssp.2008.09.006