Zobrazeno 1 - 10
of 23
pro vyhledávání: '"Troy L. Graves-Abe"'
Autor:
Troy L. Graves-Abe, Gary W. Maier, Subramanian S. Iyer, Norman Robson, Daniel Berger, Pooja R. Batra, John Golz, Toshiaki Kirihata, Matthew R. Wordeman
Publikováno v:
IEEE Journal on Emerging and Selected Topics in Circuits and Systems. 6:373-384
This paper describes orthogonal scaling of dynamic-random-access-memories (DRAMs) using through-silicon-vias (TSVs). We review 3D DRAMs including DDR3, wide I/O mobile DRAM (WIDE I/O), and more recently, the hybrid-memory cube (HMC) and high-bandwidt
Autor:
John E. Barth, Norman Robson, Troy L. Graves-Abe, Bishan He, Gary W. Maier, Douglas Charles Latulipe, Chandrasekharan Kothandaraman, Ben Himmel, Kevin R. Winstel, Tuan Vo, Spyridon Skordas, Deepika Priyadarshini, John W. Golz, Kristian Cauffman, Pooja R. Batra, Deepal Wehella Gamage, B. Peethala, Alex Hubbard, Wei Lin, Subramanian S. Iyer, Toshiaki Kirihata
Publikováno v:
Journal of Low Power Electronics and Applications
Volume 4
Issue 2
Pages 77-89
Journal of Low Power Electronics and Applications, Vol 4, Iss 2, Pp 77-89 (2014)
Volume 4
Issue 2
Pages 77-89
Journal of Low Power Electronics and Applications, Vol 4, Iss 2, Pp 77-89 (2014)
For high-volume production of 3D-stacked chips with through-silicon-vias (TSVs), wafer-scale bonding offers lower production cost compared with bump bond technology and is promising for interconnect pitches smaller than 5 µ using available tooling.
Autor:
Jinping Liu, Mukta G. Farooq, J A Oakley, William F. Landers, Subramanian S. Iyer, Daniel Berger, S Butt, John M. Safran, P Kulkarni-Kerber, Norman Robson, C. Kothandaraman, Troy L. Graves-Abe, J Xumalo, P. Oldiges, Sami Rosenblatt
Publikováno v:
2016 IEEE International Electron Devices Meeting (IEDM).
Novel device structures with vertical channels gated by TSV's are demonstrated. The unique device structure is realized in a standard TSV process flow, without new material systems or processes. They can be used for both characterizing the TSV proces
Autor:
Daniel Berger, Matthew Angyal, Norman Robson, James Pape, Joyeeta Nag, Alberto Cestero, Sandeep Torgal, Subramanian S. Iyer, K P Sarath Lal, John M. Safran, Giri N. K. Rangan, Thuy Tran-Quinn, Troy L. Graves-Abe, Gary W. Maier, Venkata Nr Vanukuru, Vikram Chaturvedi, Sami Rosenblatt, Shahid Butt
Publikováno v:
2016 IEEE 66th Electronic Components and Technology Conference (ECTC).
High performance processors and ASICs typically require multiple voltages and multi-domain voltage controls across the die. Conventional approaches distribute the voltage regulation elements between the processor, the package laminate, and the printe
Autor:
Troy L. Graves-Abe, Prakash Periasamy, Michael Iwatake, Joyce C. Liu, Menglu Li, Thuy Tran Quinn, Subramanian S. Iyer
Publikováno v:
2016 IEEE 66th Electronic Components and Technology Conference (ECTC).
Through Silicon Vias (TSV) is a key enabler for interposer and 3Di technologies. As the TSV process integration is maturing, reliability is a key parameter to be studied. One such reliability wear-out mechanisms is electro-migration (EM). In this pap
Publikováno v:
Structural Control and Health Monitoring. 15:471-504
This study explores the reliability of a wireless sensing unit by testing it in a real-world university laboratory environment. The unit employs off-the-shelf products for their key components, while a flexible payload scheme was adopted for radio pa
Publikováno v:
Smart Structures and Systems. 3:69-88
In this study, Field-Programmable Gate Arrays (FPGAs) are investigated as a practical solution to the challenge of designing an optimal platform for implementing algorithms in a wireless sensing unit for structural health monitoring. Inherent advanta
Autor:
William F. Landers, C. Kothandaraman, Christopher N. Collins, Steven W. Mittl, G. La Rosa, Mukta G. Farooq, F. Chen, Prakash Periasamy, Subramanian S. Iyer, Dimitris P. Ioannou, Jinping Liu, Daniel Berger, John M. Safran, Jennifer A. Oakley, Ghosh Somnath, Carole D. Graas, Troy L. Graves-Abe
Publikováno v:
IRPS
We integrated a copper TSV (Through Silicon Via) cell in a qualified 32SOI CMOS logic technology with high-K/metal gate and DT (Deep Trench) capacitors. Extensive wafer level characterization and reliability stressing were performed to evaluate the i
Autor:
S.S. Iyer, Jennifer A. Oakley, Troy L. Graves-Abe, William F. Landers, K. Tunga, John M. Safran, Kevin S. Petrarca, Sami Rosenblatt, C. Kothandaraman, Mukta G. Farooq, Christopher N. Collins, Stephan A. Cohen, Christopher Parks, Andrew J. Martin, Jinping Liu, John W. Golz, Norman Robson
Publikováno v:
2014 IEEE International Electron Devices Meeting.
A new interaction between TSV processes and devices in close proximity, different from mechanical stress, is identified, studied and mitigated. Detailed characterization via Triangular Voltage Sweep (TVS) and SIMS shows the role of mobile ion penetra
Autor:
Richard A. Register, Troy L. Graves-Abe, James C. Sturm, Brent Bollman, Florian Pschenitzka, H. Z. Jin
Publikováno v:
Journal of Applied Physics. 96:7154-7163
The method of solvent-enhanced dye diffusion for patterning full-color (red, green, and blue) polymer light-emitting diode displays was investigated in detail. After local dry transfer of dye onto a device polymer film, the dye remains on the surface