Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Troy Graves-Abe"'
Autor:
Pooja Batra, Spyridon Skordas, Douglas LaTulipe, Kevin Winstel, Chandrasekharan Kothandaraman, Ben Himmel, Gary Maier, Bishan He, Deepal Wehella Gamage, John Golz, Wei Lin, Tuan Vo, Deepika Priyadarshini, Alex Hubbard, Kristian Cauffman, Brown Peethala, John Barth, Toshiaki Kirihata, Troy Graves-Abe, Norman Robson, Subramanian Iyer
Publikováno v:
Journal of Low Power Electronics and Applications, Vol 4, Iss 2, Pp 77-89 (2014)
For high-volume production of 3D-stacked chips with through-silicon-vias (TSVs), wafer-scale bonding offers lower production cost compared with bump bond technology and is promising for interconnect pitches smaller than 5 µ using available tooling.
Externí odkaz:
https://doaj.org/article/5d342730d32a4aa79b9afe5a7e24598b
Autor:
Shafaat Ahmed, Paul Findeis, Connie Nga Troung, Tien Jen Cheng, Stephan Grunow, Ronald Rothkranz, Jennifer Oakley, Troy Graves-Abe
Publikováno v:
ECS Meeting Abstracts. :1900-1900
In the past few years the 3D IC integration (3DI) stacking has emerged as a potentially novel approach for extending computing performance without the high cost of CMOS scaling. The 3DI stacking technology is thought to be the essential technology of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3ee6ce1f28f1070465f8fcb1a46f5ce0
https://doi.org/10.1149/ma2016-02/29/1900
https://doi.org/10.1149/ma2016-02/29/1900