Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Troy Baker"'
Publikováno v:
ACM Transactions on Mathematical Software. 44:1-30
For configurations of point-sets that are pairwise constrained by distance intervals, the EASAL software implements a suite of algorithms that characterize the structure and geometric properties of the configuration space. The algorithms generate, de
Autor:
Rensuo Liu, Luo Xiaoju, Lai Yun, Ding Wang, Qinhao Kong, Fei Hou, Jinfeng Tang, Xianying Wang, Troy Baker
Publikováno v:
Journal of Crystal Growth. 573:126216
Four-inch semi-insulating free-standing gallium nitride (GaN) wafers grown by hydride vapor phase epitaxy (HVPE) with carbon doping were obtained by a self-separated process. The as-grown wafer thickness can reach 900 µm without cracks. The dopant g
Publikováno v:
Sustainable Water Resources Management. 4:275-289
The Walla Walla Basin in Eastern Oregon and Washington, USA, faces challenges in sustaining agricultural water supplies and endangered fisheries in the Walla Walla River (WWR). 11.1 Mm3/year of managed aquifer recharge (MAR) is currently used in the
Publikováno v:
Peabody Journal of Education. 91:574-587
This study seeks to identify and assess factors that contribute to effective independent school governance at the board of trustees level. A review of extant literature reveals two major challenges: (a) definitions and standards of board effectivenes
Publikováno v:
Water Resources Management. 28:4971-4984
The Walla Walla Basin, in Eastern Oregon and Washington, USA, faces challenges in sustaining an agricultural water supply while maintaining sufficient flow in the Walla Walla River for endangered fish populations. Minimum summer river flow of 0.71 m3
Publikováno v:
physica status solidi c. 11:373-376
Aluminum nitride (AlN) was grown on c-plane sapphire substrates by hydride vapor phase epitaxy (HVPE). The experiments utilized a two zone inductively heated hot-wall reactor capable of temperatures exceeding 1500 °C. The precursors of aluminum mono
Autor:
Jason Schmitt, Jennifer K. Hite, C. R. Eddy, Troy Baker, N.Y. Garces, Ashley Mayo, Neeraj Nepal, T. Hossain, Daming Wei, James H. Edgar, Harry M. Meyer
Publikováno v:
physica status solidi c. 11:565-568
The benefits of dry oxidation of n -GaN for the fabrication of metal-oxide-semiconductor structures are reported. GaN thin films grown on sapphire by MOCVD were thermally oxidized for 30, 45 and 60 minutes in a pure oxygen atmosphere at 850 °C to pr
Publikováno v:
Journal of Crystal Growth. 403:29-31
Aluminum nitride (AlN) was grown on c -plane sapphire substrates by hydride vapor phase epitaxy (HVPE). The experiments utilized a two zone inductively heated hot-wall reactor. The surface morphology, crystal quality, and growth rate were investigate
Autor:
S. A. Stanford, Greg Snyder, Troy Baker, Daniel Stern, Edward L. Wright, Mark Brodwin, Peter R. Eisenhardt, Matthew L. N. Ashby, Conor L. Mancone, Anthony H. Gonzalez
Publikováno v:
The Astrophysical Journal. 761:141
We measure the faint end slope of the galaxy luminosity function (LF) for cluster galaxies at 1
Comment: 9 pages, 4 figures, accepted for publication in the Astrophysical Journal
Comment: 9 pages, 4 figures, accepted for publication in the Astrophysical Journal
Publikováno v:
SPIE Proceedings.
The Attitude Determination System (ADS) aboard Space Station Freedom will utilize star trackers (ST) with CCD optical sensors and inertial sensor assemblies (ISA) with ring laser gyro (RLG) inertial rotation sensors. An on-board star catalog of some