Low-Threshold Surface-Emitting Whispering-Gallery Mode Microlasers

Autor: Babichev, Andrey, Makhov, Ivan, Kryzhanovskaya, Natalia, Troshkov, Sergey, Zadiranov, Yuriy, Salii, Yulia, Kulagina, Marina, Bobrov, Mikhail, Vasilev, Alexey, Blokhin, Sergey, Maleev, Nikolay, Karachinsky, Leonid, Novikov, Innokenty, Egorov, Anton

We report on microlasers based on high-quality micropillars with lasing on whispering-gallery modes. Usage of low-absorbing Al$\scriptsize 0.2$Ga$\scriptsize 0.8$As\Al$\scriptsize 0.9$Ga$\scriptsize 0.1$As distributed Bragg reflectors as well as the

Externí odkaz: http://arxiv.org/abs/2407.02196

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Metal organic vapor phase epitaxy growth of (Al)GaN heterostructures on SiC/Si(111) templates synthesized by topochemical method of atoms substitution

Autor: Rozhavskaya, Mariia M., Kukushkin, Sergey A., Osipov, Andrey V., Myasoedov, Alexandr V., Troshkov, Sergey I., Sorokin, Lev M., Brunkov, Pavel N., Baklanov, Alexandr V., Telyatnik, Rodion S., Juluri, Raghavendra R., Pedersen, Kjeld, Popok, Vladimir N.

Publikováno v: Rozhavskaia, M M, Kukushkin, S A, Osipov, A, Myasoedov, A V, Troshkov, S I, Sorokin, L M, Brunkov, P N, Baklanov, A V, Telyatnik, R S, Juluri, R R, Pedersen, K & Popok, V 2017, ' Metal organic vapor phase epitaxy growth of (Al)GaN heterostructures on SiC/Si(111) templates synthesized by topochemical method of atoms substitution ', Physica Status Solidi. A: Applications and Materials Science, vol. 214, no. 10, 1700190 . https://doi.org/10.1002/pssa.201700190
Rozhavskaya, M M, Kukushkin, S A, Osipov, A V, Myasoedov, A V, Troshkov, S I, Sorokin, L M, Brunkov, P N, Baklanov, A V, Telyatnik, R S, Juluri, R R, Pedersen, K & Popok, V N 2017, ' Metal organic vapor phase epitaxy growth of (Al)GaN heterostructures on SiC/Si(111) templates synthesized by topochemical method of atoms substitution ', Physica Status Solidi. A: Applications and Materials Science (Online), vol. 214, no. 10, 1700190 . https://doi.org/10.1002/pssa.201700190

We report a novel approach for metal organic vapor phase epitaxy of (Al)GaN heterostructures on Si substrates. An approximately 90-100nm thick SiC buffer layer is synthesized using the reaction between Si substrate and CO gas. High-resolution transmi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::53c785bf41330a366da30fc75a9bc979
https://vbn.aau.dk/da/publications/58af732f-b852-4c93-8530-810868c438cc

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Heat-sink free CW operation of injection microdisk lasers grown on Si substrate with emission wavelength beyond 1.3  μm

Autor: Kryzhanovskaya, Natalia, Moiseev, Eduard, Polubavkina, Yulia, Maximov, Mikhail, Kulagina, Marina, Troshkov, Sergey, Zadiranov, Yury, Guseva, Yulia, Lipovskii, Andrey, Tang, Mingchu, Liao, Mengya, Wu, Jiang, Chen, Siming, Liu, Huiyun, Zhukov, Alexey

Publikováno v: Optics Letters; September 2017, Vol. 42 Issue: 17 p3319-3322, 4p