A 70-GHz- fT double-polysilicon SiGe HBT using a non selective epitaxial growth

Autor: Baudry, H ^*, Fellous, C, Martinet, B, Romagna, F, Marty, M, Mourier, J, Troillard, G, Laurens, M, Monroy, A, Dutartre, D, Chantre, A

Publikováno v: In Materials Science & Engineering B 2002 89(1):21-25

A conventional double-polysilicon FSA-SEG Si/SiGe:C HBT reaching 400 GHz fmax

Autor: Chevalier, P., Pourchon, F., Lacave, T., Avenier, G., Campidelli, Y., Depoyan, L., Troillard, G., Buczko, M., Gloria, D., Celi, D., Gaquière, Christophe, Chantre, A.

Publikováno v: Proceedings of the 2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2009
2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2009
2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2009, 2009, Italy. pp.1-4, ⟨10.1109/BIPOL.2009.5314250⟩

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::431632ec0fdaca43f1a67f84d77ec271
https://hal.archives-ouvertes.fr/hal-00474462

BiCMOS7RF: a highly-manufacturable 0.25-μm BiCMOS RF-applications-dedicated technology using non selective SiGe:C epitaxy.

Autor: Baudry, H., Szelag, B., Deleglise, F., Laurens, M., Mourier, J., Saguin, F., Troillard, G., Chantre, A., Monroy, A.

Publikováno v: Proceedings of the Bipolar/BiCMOS Circuits & Technology Meeting, 2003; 2003, p207-210, 4p

High performance 0.25 μm SiGe and SiGe:C HBTs using non selective epitaxy.

Autor: Baudry, H., Martinet, B., Fellous, C., Kermarrec, O., Campidelli, Y., Laurens, M., Marty, M., Mourier, J., Troillard, G., Monroy, A., Dutartre, D., Bensahel, D., Vincent, G., Chantre, A.

Publikováno v: Proceedings of the 2001 BIPOLAR/BiCMOS Circuits & Technology Meeting (Cat. No.01CH37212); 2001, p52-55, 4p

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