Zobrazeno 1 - 10
of 361
pro vyhledávání: '"Troadec, D"'
Autor:
Kalboussi, Y., Curci, I., Miserque, F., Troadec, D., Brun, N., Walls, M., Jullien, G., Eozenou, F., Baudrier, M., Maurice, L., Bertrand, Q., Sahuquet, P., Proslier, T.
Materials imperfections in Nniobium based superconducting quantum circuits, in particular, two-level-system (TLS) defects, are a major source of decoherence, ultimately limiting the performance of quantum computation and sensing. Thus, identifying an
Externí odkaz:
http://arxiv.org/abs/2410.06805
Autor:
Zhang, T., Guérin, D., Alibart, F., Troadec, D., Hourlier, D., Patriarche, G., Yassin, A., Oçafrain, M., Blanchard, P., Roncali, J., Vuillaume, D., Lmimouni, K., Lenfant, S.
Publikováno v:
Nanoscale Adv., 2019,1, 2718-2726
Understanding the physical and chemical mechanisms occurring during the forming process and operation of an organic resistive memory device is a major issue for better performances. Various mechanisms were suggested in vertically stacked memory struc
Externí odkaz:
http://arxiv.org/abs/1905.12719
Autor:
Mortet, V., Taylor, A., Davydova, M., Lamač, M., Lambert, N., Elantyev, I., Lorinčík, J., Troadec, D., Vronka, M., Potocký, S.
Publikováno v:
In Diamond & Related Materials April 2022 124
Publikováno v:
In Journal of Crystal Growth 15 April 2019 512:6-10
Publikováno v:
In Journal of Crystal Growth 15 April 2019 512:11-15
Publikováno v:
In Cement and Concrete Research January 2019 115:308-326
Autor:
Clement, N., Patriarche, G., Smaali, K., Vaurette, F., Nishiguchi, K., Troadec, D., Fujiwara, A., Vuillaume, D.
Publikováno v:
SMALL 7 (18) pp. 2607-2613 (2011)
A uniform array of single-grain Au nanodots, as small as 5-8 nm, can be formed on silicon using e-beam lithography. The as-fabricated nanodots are amorphous, and thermal annealing converts them to pure Au single crystals covered with a thin SiO2 laye
Externí odkaz:
http://arxiv.org/abs/1106.4470
Publikováno v:
Microelectronic Engineering 88 (2011) 1569--1572
We investigate the fabrication of electrical contacts using ion- and electron-beam induced deposition of platinum at the sub-\mu m scale. Halos associated with the metal surface decoration are characterized electrically in the 0.05-2 \mu m range usin
Externí odkaz:
http://arxiv.org/abs/1103.1975
Akademický článek
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Publikováno v:
In Journal of Crystal Growth 1 November 2017 477:45-49