Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Tristan Smołka"'
Autor:
Tristan Smołka, Michał Rygała, Joonas Hilska, Janne Puustinen, Eero Koivusalo, Mircea Guina, Marcin Motyka
Publikováno v:
ACS Omega, Vol 8, Iss 39, Pp 36355-36360 (2023)
Externí odkaz:
https://doaj.org/article/d001e5f10c1f4db7be47552636f5d420
Autor:
Tristan Smołka, Marcin Motyka, Vyacheslav Vital’evich Romanov, Konstantin Dmitrievich Moiseev
Publikováno v:
Materials, Vol 15, Iss 4, p 1419 (2022)
Photoluminescence in a double heterostructure based on a ternary InAsSb solid solution was observed in the mid-infrared range of 2.5–4 μm. A range of compositions of the InAs1−ySby ternary solid solution has been established, where the energy re
Externí odkaz:
https://doaj.org/article/6c2822216e514fe1b594c6d741eed004
Autor:
Tristan Smołka, Katarzyna Posmyk, Maja Wasiluk, Paweł Wyborski, Michał Gawełczyk, Paweł Mrowiński, Monika Mikulicz, Agata Zielińska, Johann Peter Reithmaier, Anna Musiał, Mohamed Benyoucef
Publikováno v:
Materials, Vol 14, Iss 21, p 6270 (2021)
We present an experimental study on the optical quality of InAs/InP quantum dots (QDs). Investigated structures have application relevance due to emission in the 3rd telecommunication window. The nanostructures are grown by ripening-assisted molecula
Externí odkaz:
https://doaj.org/article/faf175fd0ff64589b5305e192e1140ae
Autor:
Tristan Smołka, Katarzyna Posmyk, Maja Wasiluk, Paweł Wyborski, Michał Gawełczyk, Paweł Mrowiński, Monika Mikulicz, Agata Zielińska, Johann Peter Reithmaier, Anna Musiał, Mohamed Benyoucef
Publikováno v:
Materials
Volume 14
Issue 21
Materials, Vol 14, Iss 6270, p 6270 (2021)
Volume 14
Issue 21
Materials, Vol 14, Iss 6270, p 6270 (2021)
We present an experimental study on the optical quality of InAs/InP quantum dots (QDs). Investigated structures have application relevance due to emission in the 3rd telecommunication window. The nanostructures are grown by ripening-assisted molecula
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b6a0a691063270c99ddc5e951f6680e7
Publikováno v:
Materials Research Express. 5:025907
In this paper, we present the results of a theoretical and experimental investigation into the refractive index and absorption, at room temperature, of a 4 μm-thick undoped epitaxial layer of GaSb deposited on a GaAs substrate. A theoretical formula
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3f4a82cdffc7703fdcb80cea373c253e
https://doi.org/10.1088/2053-1591/aaae86
https://doi.org/10.1088/2053-1591/aaae86
Publikováno v:
Materials Research Express; Feb2018, Vol. 5 Issue 2, p1-1, 1p