Zobrazeno 1 - 10
of 248
pro vyhledávání: '"Triozon, F."'
Autor:
Barbot, J., Fontanini, R., Segatto, M., Coignus, J., Triozon, F., Carabasse, C., Bedjaoui, M., Andrieu, F., Esseni, D., Grenouillet, L.
Publikováno v:
Journal of Applied Physics; 12/7/2023, Vol. 134 Issue 21, p1-10, 10p
Autor:
Rrustemi, B., Piotrowicz, C., Jaud, M-A., Triozon, F., Vandendaele, W., Mohamad, B., Gwoziecki, R., Ghibaudo, G.
Publikováno v:
In Solid State Electronics August 2022 194
Publikováno v:
In Solid State Electronics December 2021 186
Publikováno v:
Applied Physics Letters 106, 023508 (2015)
We investigate remote surface scattering (RSR) by the SiO$_2$/HfO$_2$ interface in Fully-Depleted Silicon-on-Insulator (FDSOI) devices using Non-Equilibrium Green's Functions. We show that the RSR mobility is controlled by cross-correlations between
Externí odkaz:
http://arxiv.org/abs/1504.01881
Magnetotransport measurements in large diameter multiwall carbon nanotubes (20-40 nm) demonstrate the competition of a magnetic-field dependent bandstructure and Altshuler-Aronov-Spivak oscillations. By means of an efficient capacitive coupling to a
Externí odkaz:
http://arxiv.org/abs/cond-mat/0607034
Publikováno v:
Phys. Rev. B 65, 220202 (2002)
We investigate the properties of electronic states in two and three-dimensional quasiperiodic structures: the generalized Rauzy tilings. Exact diagonalizations, limited to clusters with a few thousands sites, suggest that eigenstates are critical and
Externí odkaz:
http://arxiv.org/abs/cond-mat/0111577
Modeled optical properties of SiGe and Si layers compared to spectroscopic ellipsometry measurements
Autor:
Kriso, C., Triozon, F., Delerue, C., Schneider, L., Abbate, F., Nolot, E., Rideau, D., Niquet, Y.-M., Mugny, G., Tavernier, C.
Publikováno v:
In Solid State Electronics March 2017 129:93-96
Autor:
Foerster, D., Triozon, F.
We study the O(N) quantum Heisenberg antiferromagnet using a parametrisation in terms of real fermions. The N->infinity limit of the model is controlled by a saddle point that is infinitely degenerate in many cases and which represents singlet states
Externí odkaz:
http://arxiv.org/abs/cond-mat/9611138
Autor:
Pelloux-Prayer, J., Cassé, M., Triozon, F., Barraud, S., Niquet, Y.-M., Rouvière, J.-L., Faynot, O., Reimbold, G.
Publikováno v:
In Solid State Electronics November 2016 125:175-181
Autor:
Deshpande, V., Barraud, S., Jehl, X., Wacquez, R., Vinet, M., Coquand, R., Roche, B., Voisin, B., Triozon, F., Vizioz, C., Tosti, L., Previtali, B., Perreau, P., Poiroux, T., Sanquer, M., Faynot, O.
Publikováno v:
In Solid State Electronics June 2013 84:179-184