Zobrazeno 1 - 10
of 1 555
pro vyhledávání: '"Trimethylgallium"'
Autor:
Robert Baumgarten, Piyush Ingale, Kristian Knemeyer, Raoul Naumann d’Alnoncourt, Matthias Driess, Frank Rosowski
Publikováno v:
Nanomaterials, Vol 12, Iss 9, p 1458 (2022)
The atomic layer deposition of gallium and indium oxide was investigated on mesoporous silica powder and compared to the related aluminum oxide process. The respective oxide (GaOx, InOx) was deposited using sequential dosing of trimethylgallium or tr
Externí odkaz:
https://doaj.org/article/fe9484bd7dfb41088a9d82b5340fd0c3
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Publikováno v:
Acta Crystallographica Section E: Crystallographic Communications, Vol 73, Iss 5, Pp 691-693 (2017)
The isotypic crystal structures of two titanocene complexes containing an EMe3 unit (E = Al, Ga; Me = methyl) with two μ2-coordinating methyl groups, namely [μ-1(η5)-(adamantan-1-yl-2κC1)cycylopentadienyl]di-μ2-methyl-methyl-2κC-[1(η5)-pentame
Externí odkaz:
https://doaj.org/article/b4e42fb8512e4725bbcf4aa164cd81a3
Autor:
Isamu Akasaki, Motoaki Iwaya, Koji Okuno, Naoki Sone, Kazuma Ito, Tetsuya Takeuchi, Weifang Lu, Satoshi Kamiyama, Yoshiya Miyamoto, Sae Katsuro, Nanami Nakayama
Publikováno v:
ACS Applied Materials & Interfaces. 13:54486-54496
The morphology and crystalline quality of p-GaN shells on coaxial GaInN/GaN multiple quantum shell (MQS) nanowires (NWs) were investigated using metal-organic chemical vapor deposition. By varying the trimethylgallium (TMG) flow rate, Mg doping, and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::11543d5288d53887fdf8ef7bf7aaace8
https://doi.org/10.1021/acsami.1c13947
https://doi.org/10.1021/acsami.1c13947
Autor:
Robin Günkel, Kerstin Volz, Thilo Hepp, Johannes Glowatzki, Oliver Maßmeyer, Carsten von Hänisch, Johannes Haust, Wolfgang Stolz
Publikováno v:
ACS Omega, Vol 6, Iss 42, Pp 28229-28241 (2021)
ACS Omega
ACS Omega
Tertiarybutylarsine (TBAs) and tertiarybutylphosphine (TBP) are getting more and more established as group V precursors for the growth of V/III semiconductors by metal organic vapor phase epitaxy (MOVPE). Due to this development, the thermal decompos
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7da229575a64b291db67368dd56e28e1
https://doaj.org/article/0c1fcfc9bd3844e98edc9421ca7b7246
https://doaj.org/article/0c1fcfc9bd3844e98edc9421ca7b7246
Autor:
Béla Pécz, Ivan Gueorguiev Ivanov, Nattamon Suwannaharn, Davide Sangiovanni, Chih-Wei Hsu, Anelia Kakanakova-Georgieva, Gueorgui Kostov Gueorguiev, Ildikó Cora, Filippo Giannazzo
Publikováno v:
CrystEngComm. 23:385-390
The initial stages of metal organic chemical vapor deposition (MOCVD) of AlN on epitaxial graphene at temperatures in excess of 1200 degrees C have been rationalized. The use of epitaxial graphene, in conjunction with high deposition temperatures, ca
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::aaf0e689d6da58e141f5faa89b73b030
https://doi.org/10.1039/d0ce01426e
https://doi.org/10.1039/d0ce01426e
Autor:
Rosowski, Robert Baumgarten, Piyush Ingale, Kristian Knemeyer, Raoul Naumann d’Alnoncourt, Matthias Driess, Frank
Publikováno v:
Nanomaterials; Volume 12; Issue 9; Pages: 1458
The atomic layer deposition of gallium and indium oxide was investigated on mesoporous silica powder and compared to the related aluminum oxide process. The respective oxide (GaOx, InOx) was deposited using sequential dosing of trimethylgallium or tr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=multidiscipl::d025a900b0f6e0ecc8cc89fc1c971251
Publikováno v:
Journal of Electronic Materials. 49:5138-5143
Non-intentionally doped c-plane GaN layers are generally employed as p-side waveguide layers in violet/blue-emitting laser diodes. The recombination and diffusion of charge carriers in the p-side GaN waveguide influence the injection efficiency of ho
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::455d2d8a65e20bd3058876434afe8ea2
https://doi.org/10.1007/s11664-020-08159-x
https://doi.org/10.1007/s11664-020-08159-x
Autor:
Przemyslaw Niedzielski, Ewa Grzanka, Mike Leszczynski, Jerzy Plesiewicz, Robert Czernecki, Zbigniew Lisik, Ewa Raj
Publikováno v:
Electronics
Volume 10
Issue 12
Electronics, Vol 10, Iss 1503, p 1503 (2021)
Volume 10
Issue 12
Electronics, Vol 10, Iss 1503, p 1503 (2021)
The present paper focuses on the high-pressure metal-organic vapor phase epitaxy (MOVPE) upside-down vertical reactor (where the inlet of cold gases is below a hot susceptor). This study aims to investigate thermo-kinetic phenomena taking place durin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::beade975c6b2178eb44c3cb6c58ccd15