Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Trimaille, Isabelle"'
Autor:
Niyonzima, Jean de Dieu, Jeridi, Haifa, Essaoui, Lamya, Tosarelli, Caterina, Vlad, Alina, Coati, Alessandro, Royer, Sebastien, Trimaille, Isabelle, Goldmann, Michel, Gallas, Bruno, Constantin, Doru, Babonneau, David, Garreau, Yves, Croset, Bernard, Kralj, Samo, Kamien, Randall D., Lacaze, Emmanuelle
Smectic liquid crystals can be viewed as model systems for lamellar structures for which there has been extensive theoretical development. We demonstrate that a nonlinear energy description is required with respect to the usual Landau-de Gennes elast
Externí odkaz:
http://arxiv.org/abs/2407.10598
Akademický článek
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Autor:
Trimaille, Isabelle, Ganem, Jean-Jacques, Vickridge, Ian C., Rigo, Serge, Battistig, Gabor, Szilagyi, Edit, Baumvol, Israel J., Radtke, Claudio, Stedile, Fernanda C.
Publikováno v:
In Nuclear Inst. and Methods in Physics Research, B 2004 219:914-918
Autor:
Cavellin, Catherine Deville, Trimaille, Isabelle, Ganem, Jean-Jacques, D’Angelo, Marie, Vickridge, Ian, Pongracz, Anita, Battistig, Gabor
Publikováno v:
Journal of Applied Physics; Feb2009, Vol. 105 Issue 3, pN.PAG, 7p, 1 Chart, 4 Graphs
Publikováno v:
Physical Review A : Atomic, molecular, and optical physics [1990-2015]
Physical Review A : Atomic, molecular, and optical physics [1990-2015], 2012, 85 (4), pp.042901. ⟨10.1103/PhysRevA.85.042901⟩
Physical Review A : Atomic, molecular, and optical physics [1990-2015], 2012, 85 (4), pp.042901. ⟨10.1103/PhysRevA.85.042901⟩
International audience; We have measured the evolution with depth z of the vicinage effect and Coulomb explosion for H-2(+) and H-3(+) molecular ions traversing thick, uniform amorphous targets of Si3N4 and SiO2. High depth resolution is achieved by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______2417::f6c60d3a0634e0acd48daa79c6171a6b
https://hal.science/hal-01237478
https://hal.science/hal-01237478
Autor:
Baumvol, Israel Jacob Rabin, Ganem, Jean-Jacques, Gosset, Laurent G., Trimaille, Isabelle, Rigo, Serge
Publikováno v:
Repositório Institucional da UFRGS
Universidade Federal do Rio Grande do Sul (UFRGS)
instacron:UFRGS
Universidade Federal do Rio Grande do Sul (UFRGS)
instacron:UFRGS
The areal densities of oxygen and nitrogen incorporated into ultrathin films of silicon dioxide during rapid thermal processing in nitric oxide, as well as the regions where these incorporations took place, were determined by combining nuclear reacti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______3056::7b491846e1550c6ffd0ea8b0ad6bbe5b
Autor:
Ganem, Jean-Jacques, Rigo, Serge, Trimaille, Isabelle, Baumvol, Israel Jacob Rabin, Stedile, Fernanda Chiarello
Publikováno v:
Repositório Institucional da UFRGS
Universidade Federal do Rio Grande do Sul (UFRGS)
instacron:UFRGS
Universidade Federal do Rio Grande do Sul (UFRGS)
instacron:UFRGS
We investigated the mechanisms of thermal reoxidation in dry O2 of silicon oxynitride films prepared by processing Si~100! wafers in a rapid thermal furnace in a pure nitrous oxide ~N2O! ambient, using isotopic tracing of oxygen and nitrogen. Standar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______3056::0d0f72552e6738be117e8a117eb87ac6
Autor:
Baumvol, Israel Jacob Rabin, Stedile, Fernanda Chiarello, Ganem, Jean-Jacques, Trimaille, Isabelle, Rigo, Serge
Publikováno v:
Repositório Institucional da UFRGS
Universidade Federal do Rio Grande do Sul (UFRGS)
instacron:UFRGS
Universidade Federal do Rio Grande do Sul (UFRGS)
instacron:UFRGS
We investigated the transport of nitrogenous species during rapid thermal growth of silicon oxynitride films on Si in N2O, using N isotopic tracing and high resolution depth profiling techniques. The results indicate that the diffusion of nitrogenous
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______3056::4631099f6841c501908538f1dde04984
Autor:
Baumvol, Israel Jacob Rabin, Stedile, Fernanda Chiarello, Rigo, Serge, Ganem, Jean-Jacques, Trimaille, Isabelle
Publikováno v:
Repositório Institucional da UFRGS
Universidade Federal do Rio Grande do Sul (UFRGS)
instacron:UFRGS
Universidade Federal do Rio Grande do Sul (UFRGS)
instacron:UFRGS
The ion implantation of heavy dopant species through very thin silicon oxide gate insulators degrades the insulating properties of the oxide inducing an enhanced leakage current in MOS siructures as well as a decrease of the dielectric breakdown volt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______3056::77c534e3f082b3cd8391550837877632
Akademický článek
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