Controllable strain-driven topological phase transition and dominant surface-state transport in HfTe5

Autor: Jinyu Liu, Yinong Zhou, Sebastian Yepez Rodriguez, Matthew A. Delmont, Robert A. Welser, Triet Ho, Nicholas Sirica, Kaleb McClure, Paolo Vilmercati, Joseph W. Ziller, Norman Mannella, Javier D. Sanchez-Yamagishi, Michael T. Pettes, Ruqian Wu, Luis A. Jauregui

Publikováno v: Nature Communications, Vol 15, Iss 1, Pp 1-11 (2024)

Abstract The fine-tuning of topologically protected states in quantum materials holds great promise for novel electronic devices. However, there are limited methods that allow for the controlled and efficient modulation of the crystal lattice while s

Externí odkaz: https://doaj.org/article/ab9fba049db64c4ebbf2b6a103614450

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Modeling Dark Current Conduction Mechanisms and Mitigation Techniques in Vertically Stacked Amorphous Selenium-Based Photodetectors

Autor: Jann Stavro, Dragica Vasileska, Atreyo Mukherjee, Amir H. Goldan, John Akis, Le Thanh Triet Ho, Wei Zhao

Publikováno v: ACS Appl Electron Mater

Amorphous selenium (a-Se) with its single-carrier and non-Markovian, hole impact ionization process can revolutionize low-light detection and emerge to be a solid-state replacement to the vacuum photomultiplier tube (PMT). Although a-Se-based solid-s

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9266ec0a9b999763733afc8ef3ac4f03
https://doi.org/10.1021/acsaelm.1c00444

Vertical Architecture Solution-Processed Quantum Dot Photodetectors with Amorphous Selenium Hole Transport Layer.

Autor: Mukherjee, Atreyo, Kannan, Haripriya, Triet Ho, Le Thanh, Han, Zhihang, Stavro, Jann, Howansky, Adrian, Nooman, Neha, Kisslinger, Kim, Léveillé, Sébastien, Kizilkaya, Orhan, Liu, Xiangyu, Mølnås, Håvard, Paul, Shlok Joseph, Sung, Dong Hyun, Riedo, Elisa, Rumaiz, Abdul, Vasileska, Dragica, Zhao, Wei, Sahu, Ayaskanta, Goldan, Amir H.

Publikováno v: ACS Photonics; 1/18/2023, Vol. 10 Issue 1, p134-146, 13p

Modeling Dark Current Conduction Mechanisms and Mitigation Techniques in Vertically Stacked Amorphous Selenium-Based Photodetectors.

Autor: Triet Ho LT; Department of Electrical Engineering, College of Engineering and Applied Sciences, Stony Brook University, Stony Brook, New York 11794, United States., Mukherjee A; Department of Electrical Engineering, College of Engineering and Applied Sciences, Stony Brook University, Stony Brook, New York 11794, United States., Vasileska D; School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85287, United States., Akis J; Department of Radiology, Renaissance School of Medicine, Stony Brook University, Stony Brook, New York 11794, United States., Stavro J; Department of Radiology, Renaissance School of Medicine, Stony Brook University, Stony Brook, New York 11794, United States., Zhao W; Department of Radiology, Renaissance School of Medicine, Stony Brook University, Stony Brook, New York 11794, United States., Goldan AH; Department of Radiology, Renaissance School of Medicine, Stony Brook University, Stony Brook, New York 11794, United States.

Publikováno v: ACS applied electronic materials [ACS Appl Electron Mater] 2021 Aug 24; Vol. 3 (8), pp. 3538-3546. Date of Electronic Publication: 2021 Aug 02.