SiC for microwave power applications: present status and future trends

Autor: Trew, R.J.

Publikováno v: Trew, R.J. (1998) SiC for microwave power applications: present status and future trends. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

A variety of RF and microwave electronic devices can be fabricated from SiC. MESFET's and SIT's fabricated from 4H-SiC grown on 6H- or 4H-SiC substrates with very good dc and RF performance have been demonstrated. These devices are being developed fo

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::610d2699852d0c64d520e67c88354299

AlGaN/GaN HFET Models and the Prospects for Physics-Based Compact Models.

Autor: Trew, R.J.

Publikováno v: 2010 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS); 2010, p1-4, 4p

Widebandgap Semiconductor HFET Models for Microwave CAD.

Autor: Trew, R.J., Kuang, W., Liu, Y., Bilbro, G.L.

Publikováno v: 2008 European Microwave Integrated Circuit Conference; 2008, p286-289, 4p

RF Linearity and Nonlinear Source Resistance in AlGaN/GaN HFET's.

Autor: Yueying Liu, Trew, R.J., Bilbro, G.

Publikováno v: 2007 IEEE/MTT-S International Microwave Symposium; 2007, p597-600, 4p

Linearity Limitations of AlGaN/GaN HFET's.

Autor: Liu, Y., Trew, R.J., Bilbro, G.L., Kuang, W., Yin, H.

Publikováno v: 2006 IEEE Annual Wireless & Microwave Technology Conference; 2006, p1-4, 4p