Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Trevor Hoskins"'
Autor:
Larry Seger, Robert A. Shick, Ankur Agrawal, Larry F. Rhodes, Trevor Hoskins, Peter J. Ludovice, Won J. Chung, Clifford L. Henderson
Publikováno v:
Macromolecules. 37:4512-4518
Alicyclic polymers, such as substituted polynorbornene (PNB), are expected to be one potential material solution for providing transparent photoresist polymer resins for photolithography at 193 and 157 nm wavelengths. In this work, the dissolution be
Autor:
Trevor Hoskins
Publikováno v:
Journal of Medical Biography. 11:14-20
The composer Constant Lambert suffered a near fatal attack of septicaemia while he was at school at Christ's Hospital in 1916. His survival owed no small part to the school medical officer, Gerald Friend, himself renowned for his work on nutrition an
Autor:
Trevor Hoskins
Publikováno v:
International journal of adolescent medicine and health. 4(2)
Autor:
Trevor Hoskins
Publikováno v:
Journal of medical biography. 16(1)
Summary Herbert Aldersmith spent his entire working life, from the age of 23 years until his retirement at 65 years, as Resident Medical Officer to Christ's Hospital School. It was a crucial period in the school's history, from the overdue reforms of
Publikováno v:
SPIE Proceedings.
As 193 nm immersion lithography continues to evolve, the need to understand the effect of the immersing liquid on the resulting photoresist properties continues to grow. With this in mind, the sorption of water (using both liquid and vapor environmen
Autor:
Clifford L. Henderson, Larry Seger, Cody M. Berger, Chun Chang, Larry F. Rhodes, Peter J. Ludovice, Trevor Hoskins
Publikováno v:
SPIE Proceedings.
Alicyclic polymers, such as substituted polynorbornenes, are one potential material solution for providing photoresist polymer resins with high transparency backbones for photolithography at 193 nm and 157 nm wavelengths. In addition, the bis-trifluo
Autor:
Trevor Hoskins, Won J. Chung, Robert A. Shick, Clifford L. Henderson, Larry F. Rhodes, Peter J. Ludovice, Larry Seger
Publikováno v:
Advances in Resist Technology and Processing XX.
As features shrink below 100 nm, new exposure technologies such as 157 nm lithography are being developed. One of the critical challenges in developing these new lithographic tools and processes is the development of appropriate resist materials that