Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Trevan Landin"'
Publikováno v:
International Symposium for Testing and Failure Analysis.
Complex failure analysis often requires the use of multiple characterization instruments. For example, a defect or failure may be localized using one tool, whereas the subsequent marking, precision targeting, and high-resolution analysis may require
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb10d5592581560fb2c8d927cb977daa
https://doi.org/10.31399/asm.cp.istfa2022p0211
https://doi.org/10.31399/asm.cp.istfa2022p0211
Publikováno v:
International Symposium for Testing and Failure Analysis.
An advanced technique for site-specific Atom Probe Tomography (APT) is presented. An APT sample is prepared from a targeted semiconductor device (commercially available product based on 14nm finFET technology). Using orthogonal views of the sample in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1e072ac653a61baa2235375a0cfc4355
https://doi.org/10.31399/asm.cp.istfa2020p0144
https://doi.org/10.31399/asm.cp.istfa2020p0144
Autor:
Lisa McGill, Stephen M. Seddio, Chris Stephens, Roger L. Alvis, Jake Jensen, Zdenek Kral, Trevan Landin
Publikováno v:
International Symposium for Testing and Failure Analysis.
The potential benefits and challenges of low kV SEM imaging and EDS elemental analysis have been discussed in the SEM community since at least the early 1990s [1,2]. Concurrent with steady progress in the performance of so-called extreme high-resolut
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eca72a47ca4f28676c9314285896ce60
https://doi.org/10.31399/asm.cp.istfa2019p0308
https://doi.org/10.31399/asm.cp.istfa2019p0308
Autor:
Trevan Landin, Zdenek Kral
Publikováno v:
2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).
An advanced sample preparation technique is demonstrated on a 3D Fin-FET structure. We present a step-by-step workflow to localize/mark a target structure (defect) in the horizontal plane of the sample and convert it into a vertical cross-section lam
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1fbfa702af3c81b6a245eba74bc1c186
https://doi.org/10.1109/ipfa.2018.8452588
https://doi.org/10.1109/ipfa.2018.8452588
Plasma FIB DualBeam Delayering for Atomic Force NanoProbing of 14 nm FinFET Devices in an SRAM Array
Autor:
Sean Zumwalt, Trevan Landin, Shih-Hsin Chang, Roger Alvis, Andrew Norman Erickson, Sinjin Dixon-Warren, Chia-Hsiang Yen, Chih-Hsun Chu, Wan-Yi Liu, Pau-Sheng Kuo, Te-Fu Chang, Peter Carleson, Oleg Sidorov, Chad Rue
Publikováno v:
International Symposium for Testing and Failure Analysis.
The result of applying normal xenon ion beam milling combined with patented DX chemistry to delayer state-of-theart commercial-grade 14nm finFETs has been demonstrated in a Helios Plasma FIB DualBeam™. AFM, Conductive-AFM and nano-probing with the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4255acfd143a215568288005cbb5f435
https://doi.org/10.31399/asm.cp.istfa2015p0388
https://doi.org/10.31399/asm.cp.istfa2015p0388
Autor:
Paul Brabant, Trevan Landin, M. Rittgers, Y. Zhang, Keith Doran Weeks, B. Pagliaro, J. Spear, Joe P. Italiano, J. Ferrara, Shawn G. Thomas, R. Scott, T. Irving
Publikováno v:
Applied Surface Science. 255:1741-1743
We investigated the oxidation of hydrogen terminated Si (1 0 0) surfaces stored in Fab air environment. Hydrogen termination for extended queue times with wet and dry clean techniques is investigated. Comparison of X-ray photoelectron spectroscopy (X
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::98aa0a83bfb99b3652c7be52eb612f7a
https://doi.org/10.1016/j.apsusc.2008.06.025
https://doi.org/10.1016/j.apsusc.2008.06.025
Publikováno v:
Applied Surface Science. 224:347-349
Studies of low frequency 1/ f noise show that the key to reduce 1/ f noise is to reduce/eliminate interfacial oxides at the base–emitter interface. It was reported that an epitaxial silicon emitter has led to record 1/ f noise performance due to th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c12e44b821f7b5d8ac84b26982b8e2d8
https://doi.org/10.1016/j.apsusc.2003.08.105
https://doi.org/10.1016/j.apsusc.2003.08.105
Publikováno v:
ACS nano. 6(10)
Surfaces with special wetting properties not only can efficiently repel or attract liquids such as water and oils but also can prevent formation of biofilms, ice, and clathrate hydrates. Predicting the wetting properties of these special surfaces req
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::239a9c5ff3f0fb261444af0b39c9938a
https://pubmed.ncbi.nlm.nih.gov/23020195
https://pubmed.ncbi.nlm.nih.gov/23020195
Autor:
Peter Carleson, Michael DiBattista, Trevan Landin, Michael A. Gonzales, Roddy Cruz, Bryan Routh, Ebb Huggins, Jonathan Lau, Kenny Mani, Martin E. Parley
Publikováno v:
2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits.
Packaging technology plays a key role in the performance of many analog and RF circuits. Due to the size and geometries of interconnects, FIB based circuit edit has not been practical on the package. Plasma FIB (PFIB) technology allows cuts and rewir
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::90c803c938a79eb665e79d0fa8488fad
https://doi.org/10.1109/ipfa.2012.6306324
https://doi.org/10.1109/ipfa.2012.6306324
Publikováno v:
Microscopy and Microanalysis. 20:2000-2001
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5009869f5e88326ff97e7b899e164636
https://doi.org/10.1017/s1431927614011738
https://doi.org/10.1017/s1431927614011738