Zobrazeno 1 - 10
of 66
pro vyhledávání: '"Tretyak, O.V."'
Autor:
Ivanov, I.I., Skryshevsky, V.A., Nychyporuk, T., Lemiti, M., Makarov, A.V., Klyui, N.I., Tretyak, O.V.
Publikováno v:
In Renewable Energy July 2013 55:79-84
Development of high technologies in industry requires an implementation of a multidisciplinary approach in modern science. It put forward higher requirements for specialists in different fields of science and makes it necessary to increase the intell
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______2001::241139f612278c21bef0f0d7479274d5
http://essuir.sumdu.edu.ua/handle/123456789/33415
http://essuir.sumdu.edu.ua/handle/123456789/33415
Autor:
Bunak, S.V., Ilchenko, V.V., Melnik, V.P., Hatsevych, I.M., Romanyuk, B.N., Shkavro, A.G., Tretyak, O.V.
The theoretical and experimental investigations of electrical properties of the Al-SiO₂-( − ncsSi -SiO₂-Si structures grown using high temperature annealing SiOx, x < 2, have been carried out. It has been experimentally found that the Al-SiO₂
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______1456::e5a6a00184cbbeadc0cc5dab07ab7d44
http://dspace.nbuv.gov.ua/handle/123456789/117722
http://dspace.nbuv.gov.ua/handle/123456789/117722
Autor:
Bunak, S.V., Buyanin, A.A., Ilchenko, V.V., Marin, V.V., Melnik, V.P., Khacevich, I.M., Tretyak, O.V., Shkavro, A.G.
The theoretical and experimental investigations of electrical properties of the SiO₂/Si-ncs/SiO₂/Si structures grown by high temperature annealing SiOx, X
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______1456::44083ef6d207bd32865141a55c1d2072
http://dspace.nbuv.gov.ua/handle/123456789/117699
http://dspace.nbuv.gov.ua/handle/123456789/117699
We have used electrically detected spin-dependent paramagnetic resonance to investigate the non-equilibrium conductivity in a silicon diode. In order to create paramagnetic centers, we used diode with a polished surface (that includes p-n junction).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______1456::5644290f79e5fe97c14ed9522260e28c
http://dspace.nbuv.gov.ua/handle/123456789/117808
http://dspace.nbuv.gov.ua/handle/123456789/117808
A new technique has been proposed to obtain thin charged dielectric silica films with porous structure on a Si surface. The film composition and charge state of the dielectric/semiconductor system obtained have been studied. Thickness and porosity de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______1456::51f82396f8df65b6129bf13c8198a801
http://dspace.nbuv.gov.ua/handle/123456789/137233
http://dspace.nbuv.gov.ua/handle/123456789/137233
Luminescence spectra of carbazole, diphenylamine, tri-p-tolylamine and N,N'-diphenyl- N,N'-bis(3-methylphenyl)-(1,1'-diphenyl)-4,4'-diamine solutions in toluene and various polymer matrices have been studied at 5 and 295 К. The probability of inters
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______1456::7616dde3f10e55ae37c94e5a06a1c082
http://dspace.nbuv.gov.ua/handle/123456789/140070
http://dspace.nbuv.gov.ua/handle/123456789/140070
Publikováno v:
2000 IEEE International Symposium on Compound Semiconductors. Proceedings of the IEEE Twenty-Seventh International Symposium on Compound Semiconductors (Cat. No.00TH8498); 2000, p43-48, 6p
Autor:
Bunak, S. V., Ilchenko, V. V., Melnik, V. P., Hatsevych, I. M., Romanyuk, B. N., Shkavro, A. G., Tretyak, O.V.
Publikováno v:
Semiconductor Physics, Quantum Electronics & Optoelectronics; 2011, Vol. 14 Issue 2, p241-246, 6p
Autor:
Tretyak, O.V.1, Skryshevsky, V.A. skrysh@uninet.kiev.ua, Vikulov, V.A.1, Boyko, Yu.V.1, Zinchuk, V.M.1
Publikováno v:
Thin Solid Films. Nov2003, Vol. 445 Issue 1, p144. 7p.