A miniaturized low-power vector impedance analyser for accurate multi-parameter measurement

Autor: Luciani, G., Ramilli, R., Romani, A., Tartagni, M., Traverso, P.A., Crescentini, M.

Publikováno v: In Measurement October 2019 144:388-401

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Non-linear dynamic system modelling based on modified Volterra series approaches

Autor: Mirri, D ^∗, Iuculano, G, Traverso, P.A, Pasini, G, Filicori, F

Publikováno v: In Measurement 2003 33(1):9-21

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GaN FET nonlinear modeling based on double pulse I/V characteristics

Autor: Santarelli A., Niessen D., Cignani R., Gibiino G.P., Traverso P.A., Florian C., Schreurs D.M.M.-P., Filicori F.

Publikováno v: IEEE transactions on microwave theory and techniques 62 (2014): 3262–3273. doi:10.1109/TMTT.2014.2364236
info:cnr-pdr/source/autori:Santarelli A.; Niessen D.; Cignani R.; Gibiino G.P.; Traverso P.A.; Florian C.; Schreurs D.M.M.-P.; Filicori F./titolo:GaN FET nonlinear modeling based on double pulse I%2FV characteristics/doi:10.1109%2FTMTT.2014.2364236/rivista:IEEE transactions on microwave theory and techniques/anno:2014/pagina_da:3262/pagina_a:3273/intervallo_pagine:3262–3273/volume:62

A state-space empirical nonlinear model for GaN-based field-effect transistors (FETs) is defined, along with the associated identification procedures based on a recently published double pulse measurement technique. Charge trapping phenomena are deal

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