Zobrazeno 1 - 10
of 3 444
pro vyhledávání: '"Transition metal dichalcogenide"'
Autor:
Marinos Tountas, Katerina Anagnostou, Evangelos Sotiropoulos, Christos Polyzoidis, Emmanuel Kymakis
Publikováno v:
Nanoenergy Advances, Vol 4, Iss 3, Pp 221-234 (2024)
In this study, we explored the potential of exfoliated transition metal dichalcogenides (TMDs) as innovative spray-coated hole transport layers (HTLs) in organic photovoltaics (OPVs), addressing the need for efficient and stable materials in solar ce
Externí odkaz:
https://doaj.org/article/be127c9b46954a1e829deff4a5bf0485
Autor:
Sewon Park, Jaehoon Ji, Connor Cunningham, Srajan Pillai, Jean Rouillon, Carlos Benitez-Martin, Mengqi Fang, Eui-Hyeok Yang, Joakim Andréasson, Jeong Ho You, Jong Hyun Choi
Publikováno v:
Scientific Reports, Vol 14, Iss 1, Pp 1-8 (2024)
Abstract The ability to modulate optical and electrical properties of two-dimensional (2D) semiconductors has sparked considerable interest in transition metal dichalcogenides (TMDs). Herein, we introduce a facile strategy for modulating optoelectron
Externí odkaz:
https://doaj.org/article/8b7142524c504b0484478726361d589e
Autor:
Rodek Aleksander, Oreszczuk Kacper, Kazimierczuk Tomasz, Howarth James, Taniguchi Takashi, Watanabe Kenji, Potemski Marek, Kossacki Piotr
Publikováno v:
Nanophotonics, Vol 13, Iss 4, Pp 487-497 (2024)
We present femtosecond pump-probe measurements of neutral and charged exciton optical response in monolayer MoSe2 to resonant photoexcitation of a given exciton state in the presence of 2D electron gas. We show that creation of charged exciton (X−)
Externí odkaz:
https://doaj.org/article/967ba7ebfcaa4033a49e171016929cbb
Publikováno v:
Nanophotonics, Vol 13, Iss 8, Pp 1475-1482 (2024)
Guided exciton–polariton modes naturally exist in bare transition metal dichalcogenide (TMDC) layers due to self-hybridization between excitons and photons. However, these guided polariton modes exhibit a limited propagation distance owing to the s
Externí odkaz:
https://doaj.org/article/0238111d6536401eb4534305975f2041
Autor:
Congcong Wang, Yu Meng, Zewen Su, Junqiang Dong, Yanbang Lian, Youqiang Huang, Yinyan Li, Shiqing Xu, Gongxun Bai
Publikováno v:
Journal of Materiomics, Vol 10, Iss 1, Pp 163-172 (2024)
The acquisition of real-time temperature monitoring during photothermal therapy is significant to prevent unnecessary damage to healthy tissues. However, owing to complexity and diverse factors in microenvironment of cells, there still remain conside
Externí odkaz:
https://doaj.org/article/379edcee1dc34c6daa0e44c1f890db25
Publikováno v:
Molecules, Vol 29, Iss 21, p 5195 (2024)
Metal sulfide-based composites have become increasingly common as materials used for electrodes in supercapacitors because of their excellent conductivity, electrochemical activity, and redox capacity. This study synthesized a composite of NiFeS@MoS2
Externí odkaz:
https://doaj.org/article/fe3cc0e0664d42a98ae249d8eb6afbe7
Publikováno v:
Advanced Photonics Research, Vol 5, Iss 6, Pp n/a-n/a (2024)
A nanophotonic passively Q‐switched lasing element in the near infrared is proposed and theoretically investigated. It consists of a silicon‐rich nitride disk resonator enhanced with the contemporary MoS2/WSe2 hetero‐bilayer and a graphene mono
Externí odkaz:
https://doaj.org/article/f90aceb4c47649b389e7f9d155106df1
Autor:
Jin‐Woo Jung, Hyeon‐Seo Choi, Young‐Jun Lee, Youngjae Kim, Takashi Taniguchi, Kenji Watanabe, Min‐Yeong Choi, Jae Hyuck Jang, Hee‐Suk Chung, Dohun Kim, Youngwook Kim, Chang‐Hee Cho
Publikováno v:
Advanced Science, Vol 11, Iss 22, Pp n/a-n/a (2024)
Abstract Hexagonal boron nitride (h‐BN) is a key ingredient for various 2D van der Waals heterostructure devices, but the exact role of h‐BN encapsulation in relation to the internal defects of 2D semiconductors remains unclear. Here, it is repor
Externí odkaz:
https://doaj.org/article/d3a4a97633c6465e9389930b30e320b9
Publikováno v:
Small Structures, Vol 5, Iss 5, Pp n/a-n/a (2024)
Forming heterostructures of 2D metals and semiconductors using chemical vapor deposition (CVD) has significant potential to effectively reduce contact resistance in electronic devices. However, semiconducting transition metal dichalcogenide (TMD) lay
Externí odkaz:
https://doaj.org/article/4a62d5db996b4c5bae5887b54d71dd12
Publikováno v:
Nanophotonics, Vol 13, Iss 1, Pp 95-105 (2023)
2D materials such as transition metal dichalcogenides (TMDCs) are a new class of atomic-layer materials possessing optical and electric properties that significantly depend on the number of layers. Electronic transitions can be manipulated in artific
Externí odkaz:
https://doaj.org/article/dfc29eb2829e416b90a3996956195cef