Zobrazeno 1 - 10
of 1 373
pro vyhledávání: '"Transistor model"'
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Autor:
Sungsik Lee
Publikováno v:
IEEE Access, Vol 9, Pp 165085-165089 (2021)
In this paper, we discuss a gate bias and temperature dependencies of contact resistances in amorphous oxide semiconductor (AOS) thin-film transistors (TFTs) while developing a respective model for it. Here, it is found that the contact resistance is
Externí odkaz:
https://doaj.org/article/c5cf7d6b0cae4bf4a0577e4ba5bc20ae
Publikováno v:
Applied Sciences, Vol 12, Iss 16, p 8139 (2022)
Based on the time-dependent master equation and taking the dynamic gate current into account, a new single-electron transistor (SET) model is proposed, which can represent intrinsic terminal capacitances and transcapacitances. By using this model, bi
Externí odkaz:
https://doaj.org/article/039d2a1f93c54d9f843cb438b9014ad8
Autor:
Vincenzo d’Alessandro, Antonio Pio Catalano, Ciro Scognamillo, Markus Müller, Michael Schröter, Peter J. Zampardi, Lorenzo Codecasa
Publikováno v:
Energies, Vol 15, Iss 15, p 5457 (2022)
This paper presents a comprehensive overview of nonlinear thermal effects in bipolar transistors under static conditions. The influence of these effects on the thermal resistance is theoretically explained and analytically modeled using the single-se
Externí odkaz:
https://doaj.org/article/dc07cc77f8e74b3bae0ec6f37d44ff6b
Publikováno v:
IEEE Access, Vol 6, Pp 45772-45781 (2018)
In this paper, a new 3-D electromagnetic (EM) simulation approach for heterojunction bipolar transistor (HBT) parameter extraction in terahertz band is presented. We introduce an inter-electrode impedance equivalent-circuit model with the concept of
Externí odkaz:
https://doaj.org/article/829a230d80db48f59b41c5d297fa7f22
Autor:
Sungsik Lee
Publikováno v:
Membranes, Vol 11, Iss 12, p 954 (2021)
In this paper, we present an empirical modeling procedure to capture gate bias dependency of amorphous oxide semiconductor (AOS) thin-film transistors (TFTs) while considering contact resistance and disorder effects at room temperature. From the meas
Externí odkaz:
https://doaj.org/article/2d17f0ab5a0149b794d1f73bb42b91f5
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Autor:
Lihong Zhang, Zhenxin Zhao
Publikováno v:
IEEE Transactions on Very Large Scale Integration (VLSI) Systems. 29:1824-1837
Fast and accurate performance estimation can significantly enhance the efficiency of automated analog circuit synthesis. This article presents a novel performance modeling method that can efficiently estimate circuit performance with ignorable model
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0af49466f13740ee1186546eded4925c
https://doi.org/10.1109/tvlsi.2021.3107404
https://doi.org/10.1109/tvlsi.2021.3107404
Publikováno v:
IEEE Transactions on Very Large Scale Integration (VLSI) Systems. 29:1319-1324
Operating circuits under cryogenic conditions is effective for a large spectrum of applications. However, the refrigeration requirement for the cooling of cryogenic systems introduces serious issues in terms of power dissipation. Gain-cell embedded d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::66089a774b09e4f9f4bcd26a0d62f1b0
https://doi.org/10.1109/tvlsi.2021.3081043
https://doi.org/10.1109/tvlsi.2021.3081043
Publikováno v:
Journal of Multimedia Information System. 8:143-146
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fbe5406e19896b0cec9998dec5e4b285
https://doi.org/10.33851/jmis.2021.8.2.143
https://doi.org/10.33851/jmis.2021.8.2.143