Zobrazeno 1 - 10
of 1 605
pro vyhledávání: '"Transistor IGBT"'
Autor:
Yuchuan Liao, Abdelrahman Elwakeel, Yudi Xiao, Rafael Peña Alzola, Min Zhang, Weijia Yuan, Alfonso J. Cruz Feliciano, Lukas Graber
Publikováno v:
iEnergy, Vol 3, Iss 2, Pp 102-114 (2024)
With the increasing demand for high power density, and to meet extreme working conditions, research has been focused on investigating the performance of power electronics devices at cryogenic temperatures. The aim of this paper is to review the perfo
Externí odkaz:
https://doaj.org/article/2f9fb60e4d0f45648739150d28024ea5
Publikováno v:
Case Studies in Thermal Engineering, Vol 61, Iss , Pp 105056- (2024)
High-power insulated gate bipolar transistors (IGBTs) are important components of traction inverter. It is important to ensure the suitable temperature of the IGBT module for keeping the operation of trains efficient and safe. Due to the significant
Externí odkaz:
https://doaj.org/article/76810bfdac4a44beb1104c453200624d
Publikováno v:
International Journal of Electrical Power & Energy Systems, Vol 158, Iss , Pp 109927- (2024)
Parallel connection of multiple insulated gate bipolar transistors (IGBTs) is an important approach to improve the current level of equipment in applications of power electronics. The key to ensure the safe and stable operation of parallel IGBTs is t
Externí odkaz:
https://doaj.org/article/b818bc1af4c5457e8449d496433f28a4
Autor:
R., Manikandan, R., Raja Singh
Publikováno v:
Circuit World, 2023, Vol. 50, Issue 1, pp. 90-107.
Externí odkaz:
http://www.emeraldinsight.com/doi/10.1108/CW-09-2022-0241
Autor:
Song Yuan, Zhaoheng Yan, Yanzuo Li, Ying Wang, Qifan Liu, Xinbin Zhan, Xi Jiang, Yanjing He, Xiaowu Gong
Publikováno v:
Micromachines, Vol 15, Iss 6, p 759 (2024)
A novel insulated gate bipolar transistor with Semi-Insulated POly Silicon (SIPOS) is presented in this paper and analyzed through TCAD simulation. In the off state, the SIPOS-IGBT can obtain a uniform electric field distribution, which enables a thi
Externí odkaz:
https://doaj.org/article/850d40a02b0146528c74794be208dd9e
Publikováno v:
Shanghai Jiaotong Daxue xuebao, Vol 57, Iss 8, Pp 1005-1015 (2023)
In order to improve the accuracy of remaining useful life (RUL) prediction of insulated gate bipolar transistor(IGBT) modules across working conditions to enhance their reliability, an RUL prediction method based on the ProbSparse self-attention mech
Externí odkaz:
https://doaj.org/article/4cfcb454dcbc410fb3828e6549a3d9a8
Autor:
Fazel Mohammadi, Mehrdad Saif
Publikováno v:
IEEE Access, Vol 11, Pp 137328-137342 (2023)
The performance of Hybrid Electric Vehicles (HEVs), especially in series architecture, is highly dependent on the reliability of electric drive-motor systems. Any failure in power semiconductor devices, such as Insulated-Gate Bipolar Transistors (IGB
Externí odkaz:
https://doaj.org/article/489f5fcef9844685878ad85213e677cc
Autor:
Jingwei Zhang, Guojun Tan
Publikováno v:
IEEE Access, Vol 11, Pp 132424-132434 (2023)
Performing in-situ diagnosis is a crucial task during routine inspections of high-power converter systems, such as mine hoist. This paper presents an on-board offline condition assessment method for bond wire degradation of high-power IGBT modules wi
Externí odkaz:
https://doaj.org/article/57ea769ff897491e875a6d402b74deca
Publikováno v:
IEEE Open Journal of Power Electronics, Vol 4, Pp 740-751 (2023)
Due to the disparate timescale behavior in the electrical and thermal aspects, achieving a balance between simulation efficiency and accuracy in electrothermal analysis of insulated gate bipolar transistor (IGBT) modules has been a challenging task.
Externí odkaz:
https://doaj.org/article/5d369db798ff40e585dc7bf9c09c4ce4
Publikováno v:
IEEE Access, Vol 11, Pp 40430-40440 (2023)
Short-circuit protection plays a vital role in ensuring the overall reliability of intelligent power module (IPM), where the shorter the duration of a short-circuit fault, the smaller its impact on the module. The conventional $V_{\mathrm {CE}}$ desa
Externí odkaz:
https://doaj.org/article/9b5a86252d8340cb90ae1dfb28fe71c1