Caractérisation et modélisation du bruit de basse fréquence dans les transistors bipolaires développés en technologie BiCMOS (nœud 55 nm) pour des applications RF et THz

Autor: El beyrouthy, Johnny

Publikováno v: Acoustics [physics.class-ph]. Université Montpellier, 2020. English. ⟨NNT : 2020MONTS099⟩

In this thesis, Si/SiGe:C heterojunction bipolar transistors (HBTs) issued from BiCMOS technologies developed for RF, THz and mm-wave applications are investigated. The BiCMOS technology (B55) studied in this work is based on a 55 nm CMOS node and is

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::5c8f3c89d24b6eb64a5173efc71d9c38
https://tel.archives-ouvertes.fr/tel-03360237/file/EL_BEYROUTHY_2020_archivage.pdf

Stress-based Model for Lifetime Estimation of Bond-Wire Contacts using Power Cycling Tests and Finite Element Modelling

Autor: Nausicaa Dornic, Son Ha Tran, Richard Lallemand, Ali Ibrahim, Zoubir Khatir, Jean-Pierre Ousten, Stefan Mollov, Jeffrey Ewanchuk

Publikováno v: IEEE Journal of Emerging and Selected Topics in Power Electronics
IEEE Journal of Emerging and Selected Topics in Power Electronics, Institute of Electrical and Electronics Engineers, 2019, 8 p. ⟨10.1109/JESTPE.2019.2918941⟩

In this paper, a lifetime model for bond wire contacts of insulated gate bipolar transistors (IGBT) power modules is reported. This model is based on power cycling tests obtained under accelerated conditions, and a finite-element model taking into ac

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::61f7977e47c6c04fafbdb463e7c0ea15
https://hal.archives-ouvertes.fr/hal-02186162

IR Camera Validation of IGBT Junction Temperature Measurement via Peak Gate Current

Autor: Francesco Iannuzzo, Stig Munk-Nielsen, Laurent Dupont, Marco Liserre, Nick Baker

Publikováno v: IEEE Transactions on Power Electronics
IEEE Transactions on Power Electronics, Institute of Electrical and Electronics Engineers, 2017, 32 (4), pp.3099-3111. ⟨10.1109/TPEL.2016.2573761⟩
Baker, N, Dupont, L, Munk-Nielsen, S, Iannuzzo, F & Liserre, M 2017, ' IR Camera Validation of IGBT Junction Temperature Measurement via Peak Gate Current ', I E E E Transactions on Power Electronics, vol. 32, no. 4, pp. 3099-3111 . https://doi.org/10.1109/TPEL.2016.2573761

Infrared measurements are used to assess the measurement accuracy of the peak gate current (I GPeak ) method for Insulated-gate bipolar transistor (IGBT)junction temperature measurement. Single IGBT chips with the gate pad in both the center and the

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::da47d7cfd11cdba1fe097392e0a3619a
https://hal.archives-ouvertes.fr/hal-01704618

Recherche et évaluation d'une nouvelle architecture de transistor bipolaire à hétérojonction Si/SiGe pour la prochaine génération de technologie BiCMOS

Autor: Vu, Van Tuan

L'objectif principal de cette thèse est de proposer et d'évaluer une nouvelle architecture de Transistor Bipolaire à Héterojonction (TBH) Si/SiGe s’affranchissant des limitations de l'architecture conventionnelle DPSA-SEG (Double-Polysilicium S

Externí odkaz: http://www.theses.fr/2016BORD0304/document

Theory and Practice of the Distributed Amplifier : Application to 100-Gb/s Optical Telecommunications

Autor: Dupuy, Jean-Yves

The theory, design, optimisation and characterisation of distributed amplifiers in 0.7-µm InP DHBT technology, for 100-Gbit/s optical communication systems, are presented. We show how the appropriate implementation of the distributed amplifier conce

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od_______166::59419a408936f2834cec0d948381dd8e
https://theses.hal.science/tel-01424119