Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Tran Tuan Trung"'
Autor:
Tran Van Trieu, I. Yu. Lovshenko, V. R. Stempitsky, K. V. Korsak, Tran Tuan Trung, Dao Dinh Ha, V. V. Kolos
Publikováno v:
Цифровая трансформация, Vol 29, Iss 1, Pp 72-80 (2023)
A comparative analysis of the characteristics of the main types of bolometers is indicated in the article. The constructive solution of an uncooled thermal detector of the bolometric type, formed using the technology of microelectromechanical systems
Externí odkaz:
https://doaj.org/article/6032fb1b2d2c4837b9e586875d8696dd
Autor:
Baranov V. V., Borovik A. I., Lovshenko I. Yu., Stempitsky V. R., Tran Tuan Trung, Shelibak Ibrahim
Publikováno v:
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, Iss 1, Pp 38-43 (2015)
The use of computer simulation, design and optimization of power electronic devices formation technological processes can significantly reduce development time, improve the accuracy of calculations, choose the best options for implementation based on
Externí odkaz:
https://doaj.org/article/e2e50b9453274b44a0b1a081d1b2cde7
Publikováno v:
2022 International Conference on Advanced Technologies for Communications (ATC).
Akademický článek
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Autor:
Ivan Lovshenko, Viktor Stempitsky, Dao Dinh Ha, Nguyen Trong Quang, Veranika Khanko, Tran Tuan Trung
Publikováno v:
2019 International Conference on Advanced Technologies for Communications (ATC).
The paper presents the results of simulation of the impacts of a heavy charged particle with a value of linear energy transfer equal to 1.81 MeV·cm2/mg, 10.1 MeV.cm2/mg, 18.8 MeV.cm2/mg, 55.0 MeV.cm2/mg, corresponding to nitrogen ions15N+4with energ
Autor:
Tran Tuan Trung, A. M. Borovik, I. Yu. Lovshenko, V. V. Baranov, Viktor Stempitsky, Ibrahim Shelibak
Publikováno v:
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, Iss 1, Pp 38-43 (2015)
The use of computer simulation, design and optimization of power electronic devices formation technological processes can significantly reduce development time, improve the accuracy of calculations, choose the best options for implementation based on
Publikováno v:
2017 7th International Conference on Integrated Circuits, Design, and Verification (ICDV).
The paper describes the results of studies devoted to the development and testing of an electric (compact) Hall sensor model. The model implemented in Verilog-A hardware description language provides the capabilities of Hall sensor simulation in Cade
Publikováno v:
2016 International Conference on Advanced Technologies for Communications (ATC).
The influence of diamond heat sink layers on the electrical characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) has been investigated using numerical simulation in Wachutka's thermodynamically rigorous model of lattice heating. It
Publikováno v:
2015 International Conference on Advanced Technologies for Communications (ATC).
A new approach to nanoscale MOSFETs electrical characteristics calculating, the essence of which is the use of adjustment factors, as well as parameter values of classic driftdiffusion models, which would effectively take into account the quantum-mec