Zobrazeno 1 - 10
of 42
pro vyhledávání: '"Tran Binh Tinh"'
Autor:
Tran, Binh Tinh, Hirayama, Hideki, Jo, Masafumi, Maeda, Noritoshi, Inoue, Daishi, Kikitsu, Tomoka
Publikováno v:
In Journal of Crystal Growth 15 June 2017 468:225-229
Publikováno v:
In Journal of Crystal Growth 1 September 2014 401:648-651
Akademický článek
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Autor:
Chen Chen Chung, Kung Liang Lin, Hong Quan Nguyen, Man Chi Huang, Tieng Tung Luong, Tran Binh Tinh, Quang Ho Luc, Hai Dang Trinh, Hung Wei Yu, Chi Lang Nguyen, Edward Chang Yi
Publikováno v:
ECS Transactions. 50:461-467
We present the effect of mult iple A lN buffer layers on characterizations of GaN film quality, which includes a thin high-low-h igh-temperature (HLHT) AlN buffer layers. The study is based on two different thicknesses of the GaN films on the buffers
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::053cdac9c27303957293767555542fb8
https://doi.org/10.1149/05003.0461ecst
https://doi.org/10.1149/05003.0461ecst
Autor:
Niraj Man Shrestra, Yue-Han Wu, Edward Yi Chang, Tran Binh Tinh, Tung Tien Luong, Wei-Ching Huang, Yuan-Yee Wong, Franky Lumbantoruan
Publikováno v:
2014 IEEE International Conference on Semiconductor Electronics (ICSE2014).
The influence of TMAl preflow to the AlN buffer layer and GaN thin film was studied by Optical Microscope, Atomic Force Microscope, X-ray diffraction and Transmission Electron Microscope. Different duration of TMAl preflow lead to substantially diffe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b33e1a07052af87771454fa4cd165f7d
https://doi.org/10.1109/smelec.2014.6920785
https://doi.org/10.1109/smelec.2014.6920785
Autor:
Tran, Binh Tinh, 陳平淨
101
The main objective of the dissertation is to develop wide bandgap InxGa1-xN and InxAl1-xN on Si substrates for photovoltaic applications (solar cell and ultraviolet photodiode) with high In content that can be integral component of photovolt
The main objective of the dissertation is to develop wide bandgap InxGa1-xN and InxAl1-xN on Si substrates for photovoltaic applications (solar cell and ultraviolet photodiode) with high In content that can be integral component of photovolt
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/63110597244905133116
Autor:
Tran, Binh-Tinh, Chang, Edward-Yi, Trinh, Hai-Dang, Lee, Ching-Ting, Sahoo, Kartika Chandra, Lin, Kung-Liang, Huang, Man-Chi, Yu, Hung-Wei, Luong, Tien-Tung, Chung, Chen-Chen, Nguyen, Chi-Lang
Publikováno v:
In Solar Energy Materials and Solar Cells July 2012 102:208-211
Akademický článek
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Publikováno v:
Japanese Journal of Applied Physics. 48:126508
The external quantum efficiency of solar cells can be improved by using textured surface with minimum reflection. We have fabricated nanopillars and nanocone structures on silicon nitride surface by means of self-assembled nickel nano particle masks
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::14ce3fb863bd26d93c60de196a99fccf
https://doi.org/10.1143/jjap.48.126508
https://doi.org/10.1143/jjap.48.126508
Publikováno v:
Chemical Vapor Deposition; Mar2015, Vol. 21 Issue 1-3, p33-40, 8p