Zobrazeno 1 - 10
of 33
pro vyhledávání: '"Tran, NGOC THANH MAI"'
Autor:
Jarrett, Dean G., Rigosi, Albert F., Scaletta, Dominick S., Tran, Ngoc Thanh Mai, Hill, Heather M., Panna, Alireza R., Yang, Cheng Hsueh, Yang, Yanfei, Elmquist, Randolph E., Newell, David B.
A recent mathematical framework for optimizing resistor networks to achieve values in the M{\Omega} through G{\Omega} levels was employed for two specific cases. Objectives here include proof of concept and identification of possible apparatus limita
Externí odkaz:
http://arxiv.org/abs/2402.01496
Autor:
Scaletta, Dominick S., Mhatre, Swapnil M., Tran, Ngoc Thanh Mai, Yang, Cheng-Hsueh, Hill, Heather M., Yang, Yanfei, Meng, Linli, Panna, Alireza R., Payagala, Shamith U., Elmquist, Randolph E., Jarrett, Dean G., Newell, David B., Rigosi, Albert F.
A mathematical approach is adopted for optimizing the number of total device elements required for obtaining high effective quantized resistances in graphene-based quantum Hall array devices. This work explores an analytical extension to the use of s
Externí odkaz:
http://arxiv.org/abs/2309.15813
Autor:
Rodenbach, Linsey K., Tran, Ngoc Thanh Mai, Underwood, Jason M., Panna, Alireza R., Andersen, Molly P., Barcikowski, Zachary S., Payagala, Shamith U., Zhang, Peng, Tai, Lixuan, Wang, Kang L., Elmquist, Randolph E., Jarrett, Dean G., Newell, David B., Rigosi, Albert F., Goldhaber-Gordon, David
By directly coupling a quantum anomalous Hall resistor to a programmable Josephson voltage standard, we have implemented a quantum current sensor (QCS) that operates within a single cryostat in zero magnetic field. Using this QCS we determine values
Externí odkaz:
http://arxiv.org/abs/2308.00200
Autor:
Jarrett, Dean G., Yeh, Ching-Chen, Payagala, Shamith U., Panna, Alireza R., Yang, Yanfei, Meng, Linli, Mhatre, Swapnil M., Tran, Ngoc Thanh Mai, Hill, Heather M., Saha, Dipanjan, Elmquist, Randolph E., Newell, David B., Rigosi, Albert F.
Advances in the development of graphene-based technology have enabled improvements in DC resistance metrology. Devices made from epitaxially grown graphene have replaced the GaAs-based counterparts, leading to an easier and more accessible realizatio
Externí odkaz:
http://arxiv.org/abs/2304.11243
Autor:
Hill, Heather M., Yeh, Ching-Chen, Mhatre, Swapnil M., Tran, Ngoc Thanh Mai, Jin, Hanbyul, Biacchi, Adam J., Liang, Chi-Te, Walker, Angela R. Hight, Rigosi, Albert F.
We demonstrate the preparation of both armchair and zigzag epitaxial graphene nanoribbons (GNRs) on 4H-SiC using a polymer-assisted, sublimation growth method. Historically, the preparation of GNRs depended on the quality, or smoothness, of the surfa
Externí odkaz:
http://arxiv.org/abs/2302.14693
Autor:
Mhatre, Swapnil M., Tran, Ngoc Thanh Mai, Hill, Heather M., Yeh, Ching-Chen, Saha, Dipanjan, Newell, David B., Walker, Angela R. Hight, Liang, Chi-Te, Elmquist, Randolph E., Rigosi, Albert F.
In this work, limiting factors for developing metrologically useful arrays from epitaxial graphene on SiC are lifted with a combination of centimeter-scale, high-quality material growth and the implementation of superconducting contacts. Standard dev
Externí odkaz:
http://arxiv.org/abs/2206.05098
Autor:
Tran, Ngoc Thanh Mai, Mhatre, Swapnil M., Santos, Cristiane N., Biacchi, Adam J., Kelley, Mathew L., Hill, Heather M., Saha, Dipanjan, Liang, Chi-Te, Elmquist, Randolph E., Newell, David B., Hackens, Benoit, Hacker, Christina A., Rigosi, Albert F.
This work reports information on the transience of hole doping in epitaxial graphene devices when nitric acid is used as an adsorbent. Under vacuum conditions, desorption processes are monitored by electrical and spectroscopic means to extract the re
Externí odkaz:
http://arxiv.org/abs/2204.07647
Autor:
Mhatre, Swapnil M., Tran, Ngoc Thanh Mai, Hill, Heather M., Saha, Dipanjan, Walker, Angela R. Hight, Liang, Chi-Te, Elmquist, Randolph E., Newell, David B., Rigosi, Albert F.
This work reports the dynamics of transient hole doping in epitaxial graphene devices by using nitric acid as an adsorbent. The timescales associated with corresponding desorption processes are extracted from the data. The understanding of reversible
Externí odkaz:
http://arxiv.org/abs/2204.07645
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