Zobrazeno 1 - 10
of 192
pro vyhledávání: '"Tozer, R.C."'
Autor:
Auckloo, A., Cheong, J.S., Meng, X., Tan, C.H., Ng, J.S., Krysa, A.B., Tozer, R.C., David, J.P.R.
The performance of Al0.52In0.48P avalanche photodiodes was assessed as soft X-ray detectors at room temperature. The effect of the avalanche gain improved the energy resolution and an energy resolution (FWHM) of 682 eV is reported for 5.9 keV X-rays.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=core_ac_uk__::92509dcfa1d080bac7ec2b374c238957
https://eprints.whiterose.ac.uk/98063/1/Paper_IOP.pdf
https://eprints.whiterose.ac.uk/98063/1/Paper_IOP.pdf
This paper describes a method of modeling fluorescent lamps. The lamp model can be implemented in all major circuit simulation software packages, an example has been given for SPICE and Simulink. The model is based upon a simplified set of physical e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=core_ac_uk__::3a89fd335853a31fd49c64c2d3bfcb14
https://eprints.whiterose.ac.uk/9782/1/Tozer_physically.pdf
https://eprints.whiterose.ac.uk/9782/1/Tozer_physically.pdf
A Spice-compatible dynamic conductance model of\ud a fluorescent lamp for use in electronic ballast simulation is presented.\ud The time-dependent conductance of the fluorescent lamp is\ud derived from a plasma ionization balance equation that uses s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=core_ac_uk__::c3d3caeb4f0bfa22b66ad553245f4201
https://eprints.whiterose.ac.uk/783/1/stoned1.pdf
https://eprints.whiterose.ac.uk/783/1/stoned1.pdf
Avalanche multiplication and excess noise have been measured on a series of Al/sub x/Ga/sub 1-x/As-GaAs and GaAs-Al/sub x/Ga/sub 1-x/As (x=0.3,0.45, and 0.6) single heterojunction p/sup +/-i-n/sup +/ diodes. In some devices excess noise is lower than
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=core_ac_uk__::e8ce174297bd05855a9087831ba94ffb
https://eprints.whiterose.ac.uk/895/1/davidjpr4.pdf
https://eprints.whiterose.ac.uk/895/1/davidjpr4.pdf
Avalanche multiplication and excess noise have been measured on a series of Al/sub x/Ga/sub 1-x/As-GaAs and GaAs-Al/sub x/Ga/sub 1-x/As (x=0.3,0.45, and 0.6) single heterojunction p/sup +/-i-n/sup +/ diodes. In some devices excess noise is lower than
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=core_ac_uk__::0f48967dea80f275e02ba920822ff29e
https://eprints.whiterose.ac.uk/786/1/grovesc2.pdf
https://eprints.whiterose.ac.uk/786/1/grovesc2.pdf
The avalanche multiplication and excess noise characteristics of 4H-SiC avalanche photodiodes with i-region widths of 0.105 and 0.285 mum have been investigated using 230-365-nm light, while the responsivities of the photodiodes at unity gain were ex
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=core_ac_uk__::e65c59f0a1689dabe84503e3f883a4c2
https://eprints.whiterose.ac.uk/898/1/davidjpr7.pdf
https://eprints.whiterose.ac.uk/898/1/davidjpr7.pdf
Measurements carried out on thick Al/sub x/Ga/sub 1-x/As (x < 0.9) diodes showed that the ionization coefficients of Al/sub x/Ga/sub 1-x/As become widely different when x /spl ges/ 0.63 and are virtually independent of x for x /spl ges/ 0.72. A stron
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=core_ac_uk__::60f806ca3d9291b5bcd01bf09884c2c3
https://eprints.whiterose.ac.uk/901/1/davidjpr10.pdf
https://eprints.whiterose.ac.uk/901/1/davidjpr10.pdf
The avalanche multiplication and excess noise characteristics of thin 4H-SiC avalanche photodiodes with an i-region width of 0.1 µm have been investigated. The diodes are found to exhibit multiplication characteristics which change significantly whe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=core_ac_uk__::4f2159c4018eaf3180346bcf031b0180
https://eprints.whiterose.ac.uk/902/1/davidjpr11.pdf
https://eprints.whiterose.ac.uk/902/1/davidjpr11.pdf
The avalanche noise characteristics of Al0.8Ga0.2 As have been measured in a range of p-i-n and n-i-p diodes with i-region widths ω varying from 1.02 to 0.02 μm. While thick bulk diodes exhibit low excess noise from electron initiated multiplicatio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=core_ac_uk__::7659369a2161611a199562a83f08c0c8
https://eprints.whiterose.ac.uk/904/1/davidjpr13.pdf
https://eprints.whiterose.ac.uk/904/1/davidjpr13.pdf
The avalanche multiplication characteristics of Al0.8Ga 0.2As have been investigated in a series of p-i-n and n-i-p diodes with i-region widths, w, varying from 1 μm to 0.025 μm. The electron ionization coefficient, α, is found to be consistently
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=core_ac_uk__::85303c55a0442b89ed33e9ae6bf67eab
https://eprints.whiterose.ac.uk/905/1/davidjpr14.pdf
https://eprints.whiterose.ac.uk/905/1/davidjpr14.pdf