Zobrazeno 1 - 10
of 542
pro vyhledávání: '"Tourníe, E."'
Autor:
Benlenqwanssa, S., Krishtopenko, S. S., Meyer, M., Benhamou-Bui, B., Bonnet, L., Wolf, A., Bray, C., Consejo, C., Ruffenach, S., Nanot, S., Rodriguez, J. -B., Tournié, E., Hartmann, F., Höfling, S., Teppe, F., Jouault, B.
We present a multi-probe transport analysis that effectively separates bulk and edge currents in large Hall bar devices with standard geometries. Applied to transport measurements on all possible four-probe configurations of six-probe Hall bar device
Externí odkaz:
http://arxiv.org/abs/2410.21995
Autor:
Avogadri, C., Gebert, S., Krishtopenko, S. S., Castillo, I., Consejo, C., Ruffenach, S., Roblin, C., Bray, C., Krupko, Y., Juillaguet, S., Contreras, S., Wolf, A., Hartmann, F., Höfling, S., Boissier, G., Rodriguez, J. B., Nanot, S., Tournié, E., Teppe, F., Jouault, B.
Quantum spin Hall insulators (QSHIs) based on HgTe and three-layer InAs/GaSb quantum wells (QWs) have comparable bulk band-gaps of about 10--18~meV. The former however features a band-gap vanishing with temperature, while the gap in InAs/GaSb QSHIs i
Externí odkaz:
http://arxiv.org/abs/2203.05977
Autor:
Cornet, C., Charbonnier, S., Lucci, I., Chen, L., Letoublon, A., Alvarez, A., Tavernier, K., Rohel, T., Bernard, R., Rodriguez, J. -B., Cerutti, L., Tournie, E., Leger, Y., Patriarche, G., Largeau, L., Ponchet, A., Turban, P., Bertru, N.
Publikováno v:
Phys. Rev. Materials 4, 053401 (2020)
Here, we clarify the central role of the miscut during group III-V/ group IV crystal growth. We show that the miscut first impacts the initial antiphase domain distribution, with two distinct nucleation-driven and terraces-driven regimes. It is then
Externí odkaz:
http://arxiv.org/abs/2001.05386
Autor:
Lucchesi, C, Cakiroglu, D., Perez, J. -P, Taliercio, T., Tournié, E., Chapuis, P. -O, Vaillon, Rodolphe
Publikováno v:
Nano Lett. 21 (2021) 4524
A huge amount of thermal energy is available close to material surfaces in radiative and non-radiative states, which can be useful for matter characterization or for energy devices. One way to harness this near-field energy is to scatter it to the fa
Externí odkaz:
http://arxiv.org/abs/1912.09394
Akademický článek
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Autor:
Delorme, O., Cerutti, L., Kudrawiec, R., Luna, Esperanza, Kopaczek, J., Gladysiewicz, M., Trampert, A., Tournié, E., Rodriguez, J. -B.
Publikováno v:
Wang, Shumin and Lu, Pengfei. Bismuth-Containing Alloys and Nanostructures, Springer Series in Materials Science, pp.125-161, 2019, 978-981-13-8077-8
Dilute bismuth (Bi) III-V alloys have recently attracted great attention, due to their properties of band-gap reduction and spin-orbit splitting. The incorporation of Bi into antimonide based III-V semiconductors is very attractive for the developmen
Externí odkaz:
http://arxiv.org/abs/1910.11210
Publikováno v:
Journal of Crystal Growth, Elsevier, 2019, pp.125299
We studied and optimized the molecular beam epitaxy of GaSb layers on vicinal (001) Si substrates using a GaAs nucleation layer. An in-depth analysis of the different growth stages under optimized conditions revealed the formation of a high density o
Externí odkaz:
http://arxiv.org/abs/1910.11201
Autor:
Krishtopenko, S. S., Desrat, W., Spirin, K. E., Consejo, C., Ruffenach, S., Gonzalez-Posada, F., Jouault, B., Knap, W., Maremyanin, K. V., Gavrilenko, V. I., Boissier, G., Torres, J., Zaknoune, M., Tournié, E., Teppe, F.
Publikováno v:
Phys. Rev. B 99, 121405 (2019)
We report on the clear evidence of massless Dirac fermions in two-dimensional system based on III-V semiconductors. Using a gated Hall bar made on a three-layer InAs/GaSb/InAs quantum well, we restore the Landau levels fan chart by magnetotransport a
Externí odkaz:
http://arxiv.org/abs/1812.02468
Autor:
Lucci, I., Charbonnier, S., Pedesseau, L., Vallet, M., Cerutti, L., Rodriguez, J. -B., Tournie, E., Bernard, R., Letoublon, A., Bertru, N., Corre, A. Le, Rennesson, S., Semond, F., Patriarche, G., Largeau, L., Turban, P., Ponchet, A., Cornet, C.
Publikováno v:
Phys. Rev. Materials 2, 060401 (2018)
Here, we experimentally and theoretically clarify III-V/Si crystal growth processes. Atomically-resolved microscopy shows that mono-domain 3D islands are observed at the early stages of AlSb, AlN and GaP epitaxy on Si, independently of misfit. It is
Externí odkaz:
http://arxiv.org/abs/1804.02358
Publikováno v:
In Journal of Crystal Growth 1 January 2020 529
