Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Touichiro Goto"'
Autor:
Koji Sumitomo, Shingo Tsukada, Aya Tanaka, Nahoko Kasai, Rick Lu, Touichiro Goto, Yuichi Harada
Publikováno v:
e-Journal of Surface Science and Nanotechnology. 12:179-184
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b43e26bbdd87778146c8c55ea254ee03
https://doi.org/10.1380/ejssnt.2014.179
https://doi.org/10.1380/ejssnt.2014.179
Publikováno v:
Thin Solid Films. 518:579-582
The electrical behaviors of submicrometer bottom-gate bottom-contact organic field effect transistors (OFETs) with submicrometer channel lengths and channel widths were investigated. Short-channel effects (SCEs) were observed for devices with shorter
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::59140a1ed6df086c76699120ebba584b
https://doi.org/10.1016/j.tsf.2009.07.021
https://doi.org/10.1016/j.tsf.2009.07.021
Autor:
Hongxiang Li, Erjing Wang, Keiichi Torimitsu, Yoshiaki Kashimura, Wenping Hu, Touichiro Goto, Kazuaki Furukawa
Publikováno v:
Molecular Crystals and Liquid Crystals. 504:231-237
The structural and electrical properties of a new organic conducting polymer bearing a tetrathiafulvalene backbone whose termini are capped with the thioacetyl group were investigated. AFM observations indicated that on a gold surface, the polymers f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b2f8bd2b9f69e4907646ef5f36d79f65
https://doi.org/10.1080/15421400902950261
https://doi.org/10.1080/15421400902950261
Autor:
Hiroshi Nakashima, Hiroshi Inokawa, Koji Sumitomo, Takafumi Aoki, Touichiro Goto, Kazuaki Furukawa, Katsuhiko Degawa, Keiichi Torimitsu
Publikováno v:
Japanese Journal of Applied Physics. 45:4285-4289
We report the electrical characteristics of gold nanogap devices modified by conjugated molecules with thiol endgroups. Gold nanogap electrodes with a nominal gap distance of between 1–2 nm were fabricated by double oblique deposition from opposite
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::feecd78e42b87bae837b1baf2cb5cc30
https://doi.org/10.1143/jjap.45.4285
https://doi.org/10.1143/jjap.45.4285
Autor:
Ichiro Fujimoto, Wakako Suhara, Katsuhiko Mikoshiba, Kozo Hamada, Touichiro Goto, Keiichi Torimitsu, Hiroshi Sagara, Mime Kobayashi
Publikováno v:
Neuroscience Letters. 391:102-107
Inositol 1,4,5-trisphosphate (IP(3)) receptor (IP(3)R) acts as a ligand-gated channel that mediates neuronal signals by releasing Ca(2+) from the endoplasmic reticulum. The three-dimensional (3D) structure of tetrameric IP(3)R has been demonstrated b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d18c6c7122c1dfadd8d7a2714e035272
https://doi.org/10.1016/j.neulet.2005.08.066
https://doi.org/10.1016/j.neulet.2005.08.066
Autor:
Hiroshi Yamaguchi, Keiichi Torimitsu, S. Hirono, Hiroshi Inokawa, Masao Nagase, Touichiro Goto
Publikováno v:
Japanese Journal of Applied Physics. 46(4B):2615-2617
By using a bottom-gate top-contact field-effect transistor structure, the field effect of graphite-rich carbon nanocrystallite thin films deposited by electron cyclotron resonance sputtering was investigated. An appreciable ambipolar field effect was
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ee121f33cb54f00ad39dff27d1802696
http://hdl.handle.net/10297/9989
http://hdl.handle.net/10297/9989
Autor:
Yoshitada Katagiri, Yasuyuki Mitsuoka, Touichiro Goto, Ikutaro Kobayashi, Hiroyuki Shinojima, Yoshiaki Nakano, Hiroshi Fukuda
Publikováno v:
Applied Physics Letters. 84:852-854
Propagation losses were measured for surface plasmon-polariton (SPP) modes at metal waveguides on semiconductor substrates. The waveguides are simple strips of Au or Al deposited on InP substrates or 300-nm-thick SiO2 film covering the InP substrates
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8ff9d8b48987951d9f4d873bed8138e6
https://doi.org/10.1063/1.1645990
https://doi.org/10.1063/1.1645990
Publikováno v:
Extended Abstracts of the 2010 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::64dc62207ade52f0c0043e5cd368846c
https://doi.org/10.7567/ssdm.2010.p-10-7
https://doi.org/10.7567/ssdm.2010.p-10-7
Autor:
Hiroshi Yamaguchi, Touichiro Goto, S. Hirono, Hiroshi Inokawa, Keiichi Torimitsu, Masao Nagase
Publikováno v:
Extended Abstracts of the 2006 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a1c8c8a6b0902d375ac3016d0f838af2
https://doi.org/10.7567/ssdm.2006.a-9-5
https://doi.org/10.7567/ssdm.2006.a-9-5
Autor:
Touichiro Goto, Masao Nagase, Keiichi Torimitsu, Koji Sumitomo, Hiroshi Inokawa, Yukinori Ono
Publikováno v:
Extended Abstracts of the 2006 International Conference on Solid State Devices and Materials.
We report the effect of UV/ozone treatment on nanogap electrodes for molecular devices. Gold nanogap electrodes with a nominal gap of 1–2 nm were fabricated by double oblique deposition and the break-junction technique. Self-assembled monolayers (S
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::894eb47bcca4cce2efeaf089d9ecb4c9
https://doi.org/10.7567/ssdm.2006.d-7-3
https://doi.org/10.7567/ssdm.2006.d-7-3