Simulation of the Impact of Ionized Impurity Scattering on the Total Mobility in Si Nanowire Transistors

Autor: Toufik Sadi, Cristina Medina-Bailon, Mihail Nedjalkov, Jaehyun Lee, Oves Badami, Salim Berrada, Hamilton Carrillo-Nunez, Vihar Georgiev, Siegfried Selberherr, Asen Asenov

Publikováno v: Materials, Vol 12, Iss 1, p 124 (2019)

Nanowire transistors (NWTs) are being considered as possible candidates for replacing FinFETs, especially for CMOS scaling beyond the 5-nm node, due to their better electrostatic integrity. Hence, there is an urgent need to develop reliable simulatio

Externí odkaz: https://doaj.org/article/869f1760127b4044b9cb76524fb24877

A Kinetic Monte Carlo Study of Retention Time in a POM Molecule-Based Flash Memory

Autor: Fikru Adamu-Lema, Oves Badami, Jie Ding, Dejiang Mu, Paul Lapham, Asen Asenov, Toufik Sadi, Vihar P. Georgiev

Publikováno v: IEEE Transactions on Nanotechnology. 19:704-710

The modelling of conventional and novel memory devices has gained significant traction in recent years. This is primarily because the need to store an increasingly larger amount of data demands a better understanding of the working of the novel memor

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::5e69a990bad7afe169c89b0578432947
https://doi.org/10.1109/tnano.2020.3016182

Investigation of Pt-Salt-Doped-Standalone- Multiwall Carbon Nanotubes for On-Chip Interconnect Applications

Autor: Vihar P. Georgiev, Bernd Gotsmann, Hanako Okuno, Jaehyun Lee, Salim Berrada, Fabian Könemann, Katherina Lilienthal, Benjamin Uhlig, Jie Liang, Toufik Sadi, Dipankar Kalita, Goncalves Goncalves, Aida Todri-Sanial, A. Dhavamani, Jean Dijon, Bingan Chen, R. Ramos, Asen Asenov, Rongmei Chen

Publikováno v: IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2019, 66 (5), pp.2346-2352. ⟨10.1109/TED.2019.2901658⟩
IEEE Transactions on Electron Devices, 2019, 66 (5), pp.2346-2352. ⟨10.1109/TED.2019.2901658⟩

International audience; In this paper, we investigate, by combining electrical measurements with an atomistic-to-circuit modeling approach, the conductance of doped standalone multiwall carbon nanotubes (CNTs) as a viable candidate for the next gener

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1977ceb6a59691bf95c643c220b0ba54
https://doi.org/10.1109/ted.2019.2901658

Interdigitated back-contact double-heterojunction GaInP/GaAs solar cells

Autor: Toufik Sadi, Antti Myllynen, Jani Oksanen

Publikováno v: Progress in Photovoltaics: Research and Applications

openaire: EC/H2020/638173/EU//iTPX | openaire: EC/H2020/825142/EU//ZeroR Interdigitated back-contact (IBC) silicon solar cells are coming of age, but the potential of IBC configurations for compound semiconductor solar cells is yet to be explored. We

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a09482dbc980b73ab843addcbb6fbbc8
https://aaltodoc.aalto.fi/handle/123456789/46965

Comparison of absorption simulation in semiconductor nanowire and nanocone arrays with the Fourier modal method, the finite element method, and the finite-difference time-domain method

Autor: Henrik Mäntynen, Antti Matikainen, Toufik Sadi, Harri Lipsanen, Jari Turunen, Nicklas Anttu

For the design of nanostructured semiconductor solar cells and photodetectors, optics modelling can be a useful tool that reduces the need of time-consuming and costly prototyping. We compare the performance of three of the most popular numerical sim

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ef1b33c38371429a99465af196004602
https://aaltodoc.aalto.fi/handle/123456789/102664