Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Touati, Ferid"'
Autor:
Touati Ferid, Manabu Saji
Publikováno v:
Journal of Crystal Growth. 172:83-88
Hall measurements have been performed on gallium-doped n-type CdTe metalorganic vapor phase epitaxy layers between 25 and 300 K. The Hall coefficient and mobility data could be better explained assuming a singly ionized donor model. The ionization en
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::443688d55541003992a4b570eb2fd4a5
https://doi.org/10.1016/s0022-0248(96)00740-3
https://doi.org/10.1016/s0022-0248(96)00740-3
Publikováno v:
Journal of Electronic Materials. 24:1093-1097
Growth characteristics of (100) HgCdTe (MCT) layers by MOVPE at low temperature of 275°C were studied using ditertiarybutyltelluride as a tellurium precursor. Growths were conducted in a vertical narrow-spacing growth cell at atmospheric pressure. C
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5cb8d8255f8d721ee4025576195b11b1
https://doi.org/10.1007/bf02653058
https://doi.org/10.1007/bf02653058
Publikováno v:
Journal of Crystal Growth. 128:613-616
Correlations of surface morphology with the growth characteristics and optimal doping conditions of (100) CdTe layers grown by metalorganic vapor phase epitaxy have been studied. Growths were carried out on (100) GaAs substrates using diethyltelluriu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c049b95da0c4fb7fdfd3868ced012c38
https://doi.org/10.1016/s0022-0248(07)80010-8
https://doi.org/10.1016/s0022-0248(07)80010-8
Publikováno v:
Journal of Applied Physics. 72:3406-3409
Electronic properties in Ga‐doped (100) CdTe layers on (100) GaAs grown by atmospheric pressure metalorganic vapor phase epitaxy were studied. Triethylgallium was used as a dopant source. The source materials were dimethylcadmium (DMCd) and diethyl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5a4382d1bc51981f36bc545a361254a4
https://doi.org/10.1063/1.351412
https://doi.org/10.1063/1.351412
Publikováno v:
JOURNAL OF APPLIED PHYSICS. 71(6):2669-2674
The As doping mechanism in (100) CdTe layers grown on (100)GaAs by atmospheric‐pressure metalorganic vapor phase epitaxy was studied. Triethylarsine (TEAs) was used as a dopant source. The source materials used were dimethylcadmium (DMCd) and dieth
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f2e4c8d90346a90bb117e2d64e2bfab8
http://id.nii.ac.jp/1476/00004130/
http://id.nii.ac.jp/1476/00004130/
Publikováno v:
Journal of Crystal Growth. 117:254-258
The mechanism of As incorporation in CdTe layers grown by atmospheric-pressure metalorganic vapor phase epitaxy (MOVPE) is reported. Triethylarsine (TEAs) was used as a dopant source. The As incorporation decreased with the DETe flow rate under a fix
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7c10e2b8531efc40cd6e42d700d66253
https://doi.org/10.1016/0022-0248(92)90755-8
https://doi.org/10.1016/0022-0248(92)90755-8
Autor:
Touati, Ferid, Takemasa, Kiminori
Publikováno v:
IEEE Transactions on Electron Devices. Mar99, Vol. 46 Issue 3, p444. 5p. 3 Black and White Photographs, 1 Chart, 8 Graphs.
Autor:
Touati Ferid, Masaya Minamide, Kazuhito Yasuda, Hiroki Hatano, Kazuhiro Kawamoto, Takayuki Maejima
Publikováno v:
Japanese Journal of Applied Physics. 33:6481
Electrical properties of Hg1- x Cd x Te layers grown by low-temperature metalorganic vapor phase epitaxy at 275°C have been studied. Substrates used were (100) GaAs. The precursors used were dimethylcadmium (DMCd), elemental mercury, and ditertiaryb
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d29819f3845a98a91c63eb9fedb1d928
https://doi.org/10.1143/jjap.33.6481
https://doi.org/10.1143/jjap.33.6481
Publikováno v:
Journal of Electronic Materials; Mar1999, Vol. 28 Issue 3, p186-189, 4p
Growth characteristics of (100) HgCdTe layers in low-temperature MOVPE with ditertiarybutyltelluride
Publikováno v:
Scopus-Elsevier
Low-temperature growth of (100)HgCdTe (MCT) layers in MOVPE has been studied using ditertiarybutyltelluride (DtBTe), dimethylcadmium (DMCd), and elementary mercury as precursors. MCT layers were grown at 275°C on (100)GaAs substrates. Growths were c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f32ee00af1b96ee14eb7c03278aecaa2
http://www.scopus.com/inward/record.url?eid=2-s2.0-0030230786&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-0030230786&partnerID=MN8TOARS
