High-Performance Monolithic 3D Integrated Complementary Inverters Based on Monolayer n-MoS 2 and p-WSe 2 .

Autor: Liu MJ; Department of Materials Science and Engineering, National Tsing-Hua University, Hsinchu, 30013, Taiwan.; College of Semiconductor Research, National Tsing-Hua University, Hsinchu, 30013, Taiwan.; Department of Physics, National Sun Yat-Sen University, Kaohsiung, 80424, Taiwan., Lan WJ; Department of Materials Science and Engineering, National Tsing-Hua University, Hsinchu, 30013, Taiwan.; College of Semiconductor Research, National Tsing-Hua University, Hsinchu, 30013, Taiwan.; Department of Physics, National Sun Yat-Sen University, Kaohsiung, 80424, Taiwan., Huang CS; Department of Materials Science and Engineering, National Tsing-Hua University, Hsinchu, 30013, Taiwan.; College of Semiconductor Research, National Tsing-Hua University, Hsinchu, 30013, Taiwan.; Department of Physics, National Sun Yat-Sen University, Kaohsiung, 80424, Taiwan., Chen CZ; Department of Materials Science and Engineering, National Tsing-Hua University, Hsinchu, 30013, Taiwan.; College of Semiconductor Research, National Tsing-Hua University, Hsinchu, 30013, Taiwan.; Department of Physics, National Sun Yat-Sen University, Kaohsiung, 80424, Taiwan., Cyu RH; Department of Materials Science and Engineering, National Tsing-Hua University, Hsinchu, 30013, Taiwan.; College of Semiconductor Research, National Tsing-Hua University, Hsinchu, 30013, Taiwan.; Department of Physics, National Sun Yat-Sen University, Kaohsiung, 80424, Taiwan., Sino PAL; Department of Materials Science and Engineering, National Tsing-Hua University, Hsinchu, 30013, Taiwan.; College of Semiconductor Research, National Tsing-Hua University, Hsinchu, 30013, Taiwan.; Department of Physics, National Sun Yat-Sen University, Kaohsiung, 80424, Taiwan., Yang YL; Institute of Electronics Engineering, National Tsing Hua University, Hsinchu, 30013, Taiwan., Chiu PW; College of Semiconductor Research, National Tsing-Hua University, Hsinchu, 30013, Taiwan.; Institute of Electronics Engineering, National Tsing Hua University, Hsinchu, 30013, Taiwan., Chuang FC; Department of Physics, National Sun Yat-Sen University, Kaohsiung, 80424, Taiwan., Shen CH; National Applied Research Laboratories, Taiwan Semiconductor Research Institute, Hsinchu, 300091, Taiwan., Chen JH; National Applied Research Laboratories, Taiwan Semiconductor Research Institute, Hsinchu, 300091, Taiwan., Chueh YL; Department of Materials Science and Engineering, National Tsing-Hua University, Hsinchu, 30013, Taiwan.; College of Semiconductor Research, National Tsing-Hua University, Hsinchu, 30013, Taiwan.; Department of Physics, National Sun Yat-Sen University, Kaohsiung, 80424, Taiwan.

Publikováno v: Small (Weinheim an der Bergstrasse, Germany) [Small] 2024 Apr; Vol. 20 (17), pp. e2307728. Date of Electronic Publication: 2024 Jan 23.

Processes to enable hysteresis-free operation of ultrathin ALD Te p-channel field-effect transistors.

Autor: Kim, Minjae, Lee, Yongsu, Kim, Kyuheon, Pham, Giang-Hoang, Kim, Kiyung, Jun, Jae Hyeon, Lee, Hae-won, Yoon, Seongbeen, Hwang, Hyeon Jun, Sung, Myung Mo, Lee, Byoung Hun

Publikováno v: Nanoscale Horizons; Nov2024, Vol. 9 Issue 11, p1990-1998, 9p

Addition of GnRH antagonist in cycles of poor responders undergoing IVF.

Autor: Akman, Mehmet A., Erden, Halit F., Tosun, Suleyman B., Bayazit, Numan, Aksoy, Esra, Bahceci, Mustafa, Akman, M A, Erden, H F, Tosun, S B, Bayazit, N, Aksoy, E, Bahceci, M

Publikováno v: Human Reproduction; Oct2000, Vol. 15 Issue 10, p2145-2147, 3p

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Large-Scale Vertically Interconnected Complementary Field-Effect Transistors Based on Thermal Evaporation.

Autor: Ran Y; State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China., Song Y; State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China.; Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, China., Jia X; State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China., Gu P; State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China., Cheng Z; State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China., Zhu Y; State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China., Wang Q; State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China.; Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, China., Pan Y; State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China., Li Y; State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China., Gao Y; State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China.; Yangtze Delta Institute of Optoelectronics, Peking University, Nantong, 226010, China., Ye Y; State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China.; Yangtze Delta Institute of Optoelectronics, Peking University, Nantong, 226010, China.; Collaborative Innovation Center of Quantum Matter, Beijing, 100871, China.

Publikováno v: Small (Weinheim an der Bergstrasse, Germany) [Small] 2024 Jun; Vol. 20 (24), pp. e2309953. Date of Electronic Publication: 2023 Dec 28.