Zobrazeno 1 - 10 of 266 pro vyhledávání: '"Toshiyuki Sameshima"'
1
Akademický článek
Argon Precursor Ion Implantation Used to Activate Boron Atoms in Silicon at Low Temperatures
Autor: Toshiyuki Sameshima, Tomokazu Nagao, Erika Sekiguchi, Masahiko Hasumi
Publikováno v: IEEE Access, Vol 8, Pp 72598-72606 (2020)
The two-step implantation of argon precursor ion (Ar+) followed by boron ion (B+) in single crystalline silicon at room temperature is discussed to activate boron implanted region by post heating at 300 followed by 400°C. The implantation of Ar+ at
Externí odkaz: https://doaj.org/article/959c7477fbe74e24b527411c9cbaa0f6
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2
Akademický článek
Carbon Heating Tube Used for Rapid Heating System
Autor: Toshiyuki Sameshima, Tomoyoshi Miyazaki, Go Kobayashi, Takuji Arima, Toshitaka Kikuchi, Takuma Uehara, Takashi Sugawara, Masahiko Hasumi, Izumi Serizawa
Publikováno v: IEEE Access, Vol 7, Pp 23798-23805 (2019)
We report a microwave heating system with a carbon heating tube (CHT) which was made by a 4-mm diameter quartz tube filled with carbon particles and Ar gas at 1400 Pa. A 60-mm-long CHT was set in a cavity in which 2.45-GHz microwave was introduced. V
Externí odkaz: https://doaj.org/article/3b2825a61a264cffa833b97e8c6f885f
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5
Passivation of cut edges of crystalline silicon by heat treatment in liquid water
Autor: Masahiko Hasumi, Toshiyuki Sameshima, Tomohisa Mizuno
Publikováno v: Japanese Journal of Applied Physics. 62:SK1022
We report on the effective passivation of cut edges of n-type (100) crystalline silicon by forming thin oxide layers achieved by heat treatment in liquid water at 90 °C for 2 h followed by heating in an air atmosphere at 300 °C for 1 h. The mechani
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f746ff03ba9bf12f218447fd41d52aa9
https://doi.org/10.35848/1347-4065/acc666
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6
Near infrared photoluminescence of Si1–xGex quantum dots fabricated by double hot Ge+/Si+ implantation into SiO2 layer
Autor: Tomohisa Mizuno, Koki Murakawa, Toshiyuki Sameshima
Publikováno v: Journal of Applied Physics. 133:145703
In this study, we developed very simple and ULSI (ultra large scale integration) compatible fabrication processes for group-IV (Si1 –xGe x and Si) semiconductor quantum dots (QDs) to apply hybrid ULSIs with photonic and electron devices, using doub
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4080ef9c9d5014959447bfe03f85eb4b
https://doi.org/10.1063/5.0143637
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7
Activation of 300-mm-Diameter-Phosphorus-Implanted Silicon Substrates by Wireless Carbon Heating Tubes
Autor: Tomoyoshi Miyazaki, Sohei Saito, Go Kobayashi, Toshiyuki Sameshima, Takuma Uehara, Masahiko Hasumi, Wakana Kubo, Izumi Serizawa, Takuji Arima, Ko Onodera, Tomo Ueno
Publikováno v: 2021 28th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD).
To realize uniform heating characteristic of 2.45-GHz-microwave-induced-heating system with a 330-mm-diameter heating unit of carbon heating tubes (CHTs), we installed a propeller-type-rotational antenna with two 120-mm-long blades with tilted angles
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2d6d6005bcf6fced1430514813f983b0
https://doi.org/10.23919/am-fpd52126.2021.9499180
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8
Carbon Heating Tube Used for Rapid Heating System
Autor: Tomoyoshi Miyazaki, Toshiyuki Sameshima, Go Kobayashi, Takashi Sugawara, Izumi Serizawa, Takuji Arima, Takuma Uehara, Masahiko Hasumi, Toshitaka Kikuchi
Publikováno v: IEEE Access, Vol 7, Pp 23798-23805 (2019)
We report a microwave heating system with a carbon heating tube (CHT) which was made by a 4-mm diameter quartz tube filled with carbon particles and Ar gas at 1400 Pa. A 60-mm-long CHT was set in a cavity in which 2.45-GHz microwave was introduced. V
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1115e0fa51e4fab03ac2e1293d6292fa
https://doi.org/10.1109/access.2019.2897981
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