Zobrazeno 1 - 10
of 21
pro vyhledávání: '"Toshiyuki Sakemi"'
Publikováno v:
Journal of The Adhesion Society of Japan. 55:404-413
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3debcd542c8094e043bd8fb3bd0885e3
https://doi.org/10.11618/adhesion.55.404
https://doi.org/10.11618/adhesion.55.404
Autor:
Tetsuya Yamamoto, Hisao Makino, Y. Aoki, Keisuke Kobayashi, Junichi Nomoto, Hisashi Kitami, Seiichi Kishimoto, Toshiyuki Sakemi
Publikováno v:
Scopus-Elsevier
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1dc8b6cfce3d153d2141734d20bead55
https://doi.org/10.3131/jvsj2.60.292
https://doi.org/10.3131/jvsj2.60.292
Publikováno v:
Journal of Physics D: Applied Physics. 54:145110
We demonstrate that the state-of-the-art postirradiation technology for negatively charged oxygen (O−) ions is effective for tailoring carrier concentration (n e ), electrical resistivity (ρ), and optical band gap (E g) in a wide range for polycry
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f7482b3555c1cbbed219f26e06c32943
https://doi.org/10.1088/1361-6463/abd3cd
https://doi.org/10.1088/1361-6463/abd3cd
Autor:
Toshiyuki Sakemi, Kazuhiko Ishikawa, Tetsuya Yamamoto, Shintaro Kobayashi, Makoto Maehara, Katsuhiko Inaba, Hisashi Kitami, Yutaka Furubayashi
Publikováno v:
Applied Physics Express. 13:065502
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8e0778c21a0d6f33415ed44f52031f9c
https://doi.org/10.35848/1882-0786/ab8b6b
https://doi.org/10.35848/1882-0786/ab8b6b
Publikováno v:
Thin Solid Films. 494:38-41
We report on Raman scattering studies of Ga-doped ZnO thin films that were grown by intentionally changing oxygen partial pressure in order to study the influences of oxygen partial pressure on local structural properties of this material. Raman spec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e9866a31ee0848472c41a8538c1ede1c
https://doi.org/10.1016/j.tsf.2005.07.179
https://doi.org/10.1016/j.tsf.2005.07.179
Publikováno v:
Superlattices and Microstructures. 39:218-228
Measurements of Hall effect, optical transmittance, reflectance and photoluminescence (PL) have been carried out on large area (1 m wide) polycrystalline Ga-doped ZnO (GZO) films prepared by a reactive plasma deposition (RPD) method using two plasma
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d97cad536e8a3bbe5e38176a39ec9a7a
https://doi.org/10.1016/j.spmi.2005.08.045
https://doi.org/10.1016/j.spmi.2005.08.045
Autor:
Takahiro Yamada, T. Mitsunaga, Tetsuya Yamamoto, Toshiyuki Sakemi, Kiyoshi Awai, Sho Shirakata, K. Ikeda, Seiichi Kishimoto, Minoru Osada, Hisao Makino
Publikováno v:
Superlattices and Microstructures. 38:369-376
The dependences of lattice constant, crystallite size and internal strain in the (100) direction for Ga-doped ZnO (GZO; Ga content, 3 wt%) films on O 2 gas flow rate (0–20 sccm) during deposition were investigated. GZO films have been prepared by r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8eba25cba00c2f990fd3bfdc27a43dc4
https://doi.org/10.1016/j.spmi.2005.08.007
https://doi.org/10.1016/j.spmi.2005.08.007
Autor:
Paul Fons, Kiyoshi Awai, Hitoshi Tampo, Kakuya Iwata, Akimasa Yamada, S. Niki, Shogo Ishizuka, Toshiyuki Sakemi, Koji Matsubara, Sho Shirakata, Tetsuya Yamamoto, Keiichiro Sakurai
Publikováno v:
Thin Solid Films. :199-203
Reactive plasma deposition (RPD) is a technique for depositing a thin film on a substrate using a pressure–slope type plasma ion gun. This method offers the advantage of low-ion damage, low deposition temperature, large area deposition and high gro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::17d8f2242039a82c620a202fdfed0ad0
https://doi.org/10.1016/j.tsf.2004.11.072
https://doi.org/10.1016/j.tsf.2004.11.072
Publikováno v:
Thin Solid Films. :439-442
Transparent and conductive Ga-doped ZnO films have been deposited at a glass substrate temperature of 200 °C using an ion plating system. The resistivity as low as 2.7×10−4 Ω cm with a high carrier concentration of 8×1020 cm−3, Hall mobility
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e1724ab92ae85d0f24c7a441a3cfa5d
https://doi.org/10.1016/j.tsf.2003.10.138
https://doi.org/10.1016/j.tsf.2003.10.138
Autor:
Keiichiro Sakurai, Kakuya Iwata, Kiyoshi Awai, Hitoshi Tampo, Tetsuya Yamamoto, Toshiyuki Sakemi, M. Matsubara, S. Niki, Shogo Ishizuka, Paul Fons, Akimasa Yamada
Publikováno v:
Thin Solid Films. :219-223
The Uramoto-gun with Tanaka magnetic field (URT)-ion plating (IP) method is a novel ion plating technique for thin film deposition. This method offers the advantage of low-ion damage, low deposition temperatures, large area deposition and high growth
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::320884fec68c9c6aeb609a556d58903e
https://doi.org/10.1016/j.tsf.2003.10.095
https://doi.org/10.1016/j.tsf.2003.10.095