Výsledky vyhledávání - "Toshiyuki Miyanagi"

Migration of Dislocations in 4H-SiC Epilayers during the Ion Implantation Process

Autor: Masahiro Nagano, L. Storasta, Toshiyuki Miyanagi, Hidekazu Tsuchida, Isaho Kamata

Publikováno v: Materials Science Forum. :271-274

Synchrotron reflection X-ray topography and KOH etching were applied to investigate the effects of the ion implantation/annealing process on the existing dislocations in the 4H-SiC epilayers and second epitaxial growth on the ion implanted layer. No

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::976c4270b4f6dc172cbbd8892c01370b
https://doi.org/10.4028/www.scientific.net/msf.556-557.271

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Distinction of the Nuclei of Shockley Faults in 4H-SiC{0001} pin Diodes by Electroluminescence Imaging

Autor: Hidekazu Tsuchida, Toshiyuki Miyanagi, Isaho Kamata, Yoshitaka Sugawara, R. Ishii, Koji Nakayama

Publikováno v: Materials Science Forum. :251-254

We investigated the location of the nuclei of Shockley-type stacking faults (SSFs) in the 4H-SiC pin diodes, using electroluminescence (EL) imaging. The nuclei of SSFs were identified as three types, located (i) on the mesa edge, (ii) in the surface

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::96f8b3f4983d3c50d4a99a6dcd98e225
https://doi.org/10.4028/www.scientific.net/msf.556-557.251

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Comparison of Propagation and Nucleation of Basal Plane Dislocations in 4H-SiC(000-1) and (0001) Epitaxy

Autor: Tomonori Nakamura, Yoshitaka Sugawara, Koji Nakayama, Toshiyuki Miyanagi, Isaho Kamata, R. Ishii, Hidekazu Tsuchida

Publikováno v: Materials Science Forum. :231-234

Propagation and nucleation of basal plane dislocations (BPDs) in 4H-SiC(000-1) and (0001) epitaxy were compared. Synchrotron reflection X-ray topography was performed before and after epitaxial growth to classify the BPDs into those propagated from t

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7770c0d291cc95a94d2606d81a23508a
https://doi.org/10.4028/www.scientific.net/msf.527-529.231

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Dynamic Characteristics of 4H-SiC pin Diode on (000-1)C-Face with Small Forward Degradation

Autor: Koji Nakayama, Hidekazu Tsuchida, Toshiyuki Miyanagi, Tomonori Nakamura, R. Ishii, Isaho Kamata, Yoshitaka Sugawara

Publikováno v: Materials Science Forum. :1359-1362

Forward voltage degradation has been reduced by fabricating diodes on the (000-1)C-face. The reverse recovery characteristics of the 4H-SiC pin diode on the (000-1)C-face have been investigated. The pin diode on the C-face has superior potential to t

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6b57e78d52bb53c7074cb6d5c4cb6589
https://doi.org/10.4028/www.scientific.net/msf.527-529.1359

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Comparison of Electrical Characteristics of 4H-SiC(0001) and (000-1) Schottky Barrier Diodes

Autor: Toshiyuki Miyanagi, Hidekazu Tsuchida, Isaho Kamata, Tomonori Nakamura

Publikováno v: Materials Science Forum. :927-930

We compared the electrical characteristics of 4H-SiC(0001) and (000-1) Schottky barrier diodes (SBDs), and derived the Schottky barrier heights (Hbs) of Ta, W, Mo, and Pd on {0001}. We investigated the annealing temperature dependence of Hbs in Mo an

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6c29a590278732a5e990f5dbd57fd0fb
https://doi.org/10.4028/www.scientific.net/msf.527-529.927

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Development of Non-Destructive In-House Observation Techniques for Dislocations and Stacking Faults in SiC Epilayers

Autor: Toshiyuki Miyanagi, Tomonori Nakamura, Hidekazu Tsuchida, Isaho Kamata

Publikováno v: Materials Science Forum. :415-418

We have developed non-destructive in-house observation techniques for dislocations and stacking faults (SFs) in 4H-SiC epilayers. Low temperature photoluminescence (PL) mapping was carried out at 100K using He-Cd laser (325 nm) as an exciation source

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::bd764d737ebc61adc7b40853136b9c6a
https://doi.org/10.4028/www.scientific.net/msf.527-529.415

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Observation of Shrinking and Reformation of Shockley Stacking Faults by PL Mapping

Autor: Tomonori Nakamura, Yoshitaka Sugawara, Hidekazu Tsuchida, Koji Nakayama, Toshiyuki Miyanagi, Isaho Kamata, R. Ishii

Publikováno v: Materials Science Forum. :375-378

We provide evidence of shrinking of Shockley-type stacking faults (SSFs) in the SiC epitaxial layer by high temperature annealing. Photoluminescence (PL) mapping in combination with high-power laser irradiation makes it possible to investigate the fo

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2c728bedd8dcf60acfa7fe02a2fd33b0
https://doi.org/10.4028/www.scientific.net/msf.527-529.375

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Improvement in Electrical Performance of Schottky Contacts for High-Voltage Diode

Autor: Kunikaza Izumi, Isaho Kamata, Toshiyuki Miyanagi, Tomonori Nakamura, Hidekazu Tsuchida, Tamotsu Jikimoto

Publikováno v: Materials Science Forum. :721-724

We investigated the effect of high temperature annealing on the Schottky barrier height (Fb) and the ideality factor (n-factor) of a Mo contact. In a Mo contact, the Fb increased and the leakage current decreased by annealing at 600oC, while no incre

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::00a145dc338465632de0aced3c133fac
https://doi.org/10.4028/www.scientific.net/msf.483-485.721

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