Zobrazeno 1 - 10
of 25
pro vyhledávání: '"Toshiyuki Kai"'
Autor:
Ken Maruyama, Tadatomi Nishikubo, Toshiro Itani, Tsutomu Shimokawa, Hiroaki Oizumi, Hiroto Kudo, Nobumitsu Niina, Toshiyuki Kai
Publikováno v:
Polymer Journal. 43:407-413
We synthesized Noria analogs (Noria-OEt) with 12 ethoxy groups and 12 hydroxy groups by the condensation reaction of 3-ethoxyphenol with 1,5-pentanedial in high yield and prepared negative-type photoresist composed of Noria-OEt, crosslinker, photoaci
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5aa35b929bdbd32a674157fa4aa883eb
https://doi.org/10.1038/pj.2010.146
https://doi.org/10.1038/pj.2010.146
Publikováno v:
Journal of Photopolymer Science and Technology. 23:643-648
In order to achieve targeted resist performance for EUV in practical applications, we have developed new materials such as molecular glass (MG), PAG, and acid amplifiers (AA). Protected NORIA, a molecular glass, was examined for extending resolution
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1acf10a08d2a27453855aae82ff9014b
https://doi.org/10.2494/photopolymer.23.643
https://doi.org/10.2494/photopolymer.23.643
Autor:
Toshiyuki Kai, Tsutomu Shimokawa, Seiichi Tagawa, Kenichiro Natsuda, Takahiro Kozawa, Akinori Saeki
Publikováno v:
Japanese Journal of Applied Physics. 47:4932-4935
Ionizing radiation such as extreme ultraviolet (EUV) radiation and electron beams generates secondary electrons in resist materials. Acid generators are mainly decomposed by reaction with these electrons. The reaction of acid generators with solvated
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3ca7dad8165457a9b967c92b4b4b7594
https://doi.org/10.1143/jjap.47.4932
https://doi.org/10.1143/jjap.47.4932
Autor:
Koichi Fujiwara, Iwao Nishiyama, Daisuke Shimizu, Tsutomu Shimokawa, Toshiyuki Kai, Akio Saitou, Yukiko Kikuchi, Ken Maruyama
Publikováno v:
Journal of Photopolymer Science and Technology. 20:423-428
For next generation lithography, several technologies have been proposed to achieve the ultra-fine patterning required for the 32nm node and beyond. Extreme ultraviolet (EUV) lithography is one of the promising candidates but faces several critical i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a45d83f418d622ef7142c36f5008707f
https://doi.org/10.2494/photopolymer.20.423
https://doi.org/10.2494/photopolymer.20.423
Publikováno v:
Journal of Photopolymer Science and Technology. 20:577-583
For the development of resist materials for postoptical lithographies, the suppression of acid diffusion and the enhancement of the acid generation efficiency are required to meet both resolution and sensitivity requirements. In this study, we analyz
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bdd37fcc4b0853ce37fff5a792b8e87b
https://doi.org/10.2494/photopolymer.20.577
https://doi.org/10.2494/photopolymer.20.577
Autor:
Atsuro Nakano, Seiichi Tagawa, Kazumasa Okamoto, Toshiyuki Kai, Takahiro Kozawa, Tsutomu Shimokawa
Publikováno v:
Japanese Journal of Applied Physics. 45:6866-6871
With the shrinkage of patterns, the elucidation of reaction mechanisms at the molecular level has become essential in resist design. In particular, proton dynamics is one of the most important issues on the sensitivity and resolution of chemically am
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a689569e3f89fd6a9979d7bf2e00549b
https://doi.org/10.1143/jjap.45.6866
https://doi.org/10.1143/jjap.45.6866
Autor:
James F. Wishart, Seiichi Tagawa, Atsuro Nakano, Toshiyuki Kai, Takahiro Kozawa, Tsutomu Shimokawa, Tomasz Szreder
Publikováno v:
Japanese Journal of Applied Physics. 45:L197-L200
In chemically amplified resists for ionizing radiations such as electron beams and extreme ultraviolet (EUV), low-energy electrons play an important role in the pattern formation processes. The reactivity of acid generators with low-energy electrons
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e14d5fda13d35049c8d2d0c42fe76eb
https://doi.org/10.1143/jjap.45.l197
https://doi.org/10.1143/jjap.45.l197
Publikováno v:
Journal of Photopolymer Science and Technology. 16:447-450
Electron beam (EB) lithography, together with ArF, F2 and EUV (Extreme Ultra-Violet), is one of the most promising candidates for the next generation 65 nm node and below from the viewpoint of resolution and DOF (depth of focus). However, since EB li
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::80c776ccda6452cef202884d392672c6
https://doi.org/10.2494/photopolymer.16.447
https://doi.org/10.2494/photopolymer.16.447
Autor:
Toshiyuki Kai, Daisuke Shimizu, Takahiro Kozawa, Seiichi Tagawa, Ryo Hirose, Tsutomu Shimokawa
Publikováno v:
Japanese Journal of Applied Physics. 47:7125-7127
Chemically amplified resists have been used in the mass production of semiconductors. Poly(hydroxystyrene)-based resists have been extensively developed for KrF lithography. After KrF lithography, polyacrylate-based resists have been developed for Ar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fe0b13e16925cb811ffb232c744c2156
https://doi.org/10.1143/jjap.47.7125
https://doi.org/10.1143/jjap.47.7125
Publikováno v:
Japanese Journal of Applied Physics. 46:L979-L981
The absorption coefficient and acid generation efficiency are elemental key factors for the design of chemically amplified resist because the acid distribution in resist films is primarily determined by these two factors. In this study, the number of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5aead842b6ce45a02ebede42cdd03326
https://doi.org/10.1143/jjap.46.l979
https://doi.org/10.1143/jjap.46.l979