Zobrazeno 1 - 10
of 154
pro vyhledávání: '"Toshiyuki Isshiki"'
Autor:
Noriyuki Hasuike, Saito Ochiai, Ryotaro Iwakiri, Minoru Takeda, Woo Sik Yoo, Toshiyuki Isshiki
Publikováno v:
Proceedings, Vol 2, Iss 13, p 1034 (2018)
We newly proposed transparent conductive oxide with diffraction grating structure as an excitation field of surface plasmon resonance working at near-infrared spectral region. We experimentally demonstrated the excitation of SPR using Sn-doped In2O3
Externí odkaz:
https://doaj.org/article/491d287b23b8400794b100823be475d0
Publikováno v:
IEEE Transactions on Engineering Management. 69:17-33
This article aims to introduce a case study of application and upgrading exercise of technology roadmapping to be introduced for the implementation of industrial science and technology policy. Ministry of Economy, Trade and Industry (METI) and New En
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c2ac787747abc90777ac54340c529aeb
https://doi.org/10.1109/tem.2020.3032603
https://doi.org/10.1109/tem.2020.3032603
Autor:
Sou Isaji, Issei Maeda, Naoya Ogawa, Ryo Kosaka, Noriyuki Hasuike, Toshiyuki Isshiki, Kenji Kobayashi, Yongzhao Yao, Yukari Ishikawa
Publikováno v:
Journal of Electronic Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d9aeb63d6af0d28216a05e5b9d2e2a48
https://doi.org/10.1007/s11664-023-10363-4
https://doi.org/10.1007/s11664-023-10363-4
Publikováno v:
Japanese Journal of Applied Physics. 62:SF1020
To develop high-performance semiconductor devices, it is critical to study the relationship between stress and phonon frequency shifts. We used micro-Raman spectroscopy on a β-Ga2O3(001) wafer to better understand the relationship. We applied tensil
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::88697e6667fe9257677d3fba9947ebe0
https://doi.org/10.35848/1347-4065/acc74a
https://doi.org/10.35848/1347-4065/acc74a
Autor:
Oki Sekizawa, Hiroki Suga, Nobuyuki Tatemizo, Shuichi Mamishin, Saki Imada, Katsuji Ito, Yuya Suzuki, Koji Nishio, Yusuke Tamenori, Kiyofumi Nitta, Toshiyuki Isshiki
Publikováno v:
Materials Advances. 2:4075-4080
Wurtzite AlN films with high Fe concentrations were deposited on Si(100) substrates using radio-frequency sputtering, and the growth process was investigated. X-Ray diffraction (XRD) analysis with parallel incident X-rays showed that a thick film (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cd6f03492bd38becb823614f1464cc92
https://doi.org/10.1039/d0ma01026j
https://doi.org/10.1039/d0ma01026j
Publikováno v:
Journal of Electronic Materials. 49:5190-5195
We reported our observation results on the etch pit shapes on β-Ga2O3 (001) wafers using a scanning electron microscope (SEM) and an atomic force microscope (AFM) in a previous study. However, it was difficult to detect the internal crystal defects
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::55f2df0cfc12feadb17f7b15f1013c16
https://doi.org/10.1007/s11664-020-08313-5
https://doi.org/10.1007/s11664-020-08313-5
Autor:
Kentaro Ohira, Hideki Sako, Masaki Hasegawa, Kenji Kobayashi, Katsunori Onuki, Toshiyuki Isshiki
Publikováno v:
Materials Science Forum. 1004:314-320
Stacking faults (SFs) in 4H-SiC epitaxial wafers were inspected by using a mirror projection electron microscope (MPJ) [1, 2]. Dark and bright line contrasts of SFs in MPJ images represent surface morphology and crystal defects located in the epitaxi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::88b5a674ace826935790a8a1ab7f5a03
https://doi.org/10.4028/www.scientific.net/msf.1004.314
https://doi.org/10.4028/www.scientific.net/msf.1004.314
Publikováno v:
Materials Science Forum. 1004:421-426
Two types of carrot defects with and without a shallow pit were found by mirror projection electron microscopy (MPJ) inspection in 4H-SiC epi wafer. Surface morphology and cross-sectional structure of prismatic stacking faults (PSFs) were investigate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c050c7a3f53c8e86db75a9eb1b5c26f4
https://doi.org/10.4028/www.scientific.net/msf.1004.421
https://doi.org/10.4028/www.scientific.net/msf.1004.421
Autor:
Naoya Ogawa, Masato Iyoki, Yukari Ishikawa, Toru Aiso, Ryo Kosaka, Toshiyuki Isshiki, Yongzhao Yao, Kenichi Ogawa
Publikováno v:
Materials Science Forum. 1004:512-518
In order to understand the crystal defects of beta-gallium oxide (β-Ga2O3) in more detail, we classified the crystal defects of a 2-inch substrate of β-Ga2O3 (001) single crystal. As a result of observing the etch pits formed by molten alkali etchi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::374cb5253372251c7449c69f60d35334
https://doi.org/10.4028/www.scientific.net/msf.1004.512
https://doi.org/10.4028/www.scientific.net/msf.1004.512
Publikováno v:
Materials Science Forum. 1004:497-504
The defect structure of Mg implanted GaN substrate was evaluated by TEM observations, AFM surface observations and Raman scattering spectroscopic analysis. Mg ions were implanted at room temperature (RT) and 500 °C. TEM results showed that the defec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd44200b944bf9f7627445369c978c04
https://doi.org/10.4028/www.scientific.net/msf.1004.497
https://doi.org/10.4028/www.scientific.net/msf.1004.497