Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Toshiya Kamada"'
Publikováno v:
Thin Solid Films. 520:4389-4393
Phase change random access memory (PCRAM) requires an advanced phase change material to lower its power consumption and to enhance its data retention and endurance abilities. The present work investigated the crystallization behaviors and electrical
Publikováno v:
Acta Materialia. 60:872-880
The crystallization kinetics of amorphous Ge 1 Cu 2 Te 3 (GCT) films prepared by sputter deposition were investigated by differential scanning calorimetry under non-isothermal conditions. An exothermic peak due to crystallization was observed in the
Publikováno v:
MRS Proceedings. 1251
The electrical resistance on the crystallization process of sputtered-deposited Ge1Cu2Te3 film was investigated by two-point probe method. It was found that the amorphous Ge1Cu2Te3 film crystallizes into a single Ge1Cu2Te3 phase with a chalcopyrite s