Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Toshitaka Kurosawa"'
Publikováno v:
Japanese Journal of Applied Physics. 42:6742-6747
We investigated defects in polycrystalline silicon (poly-Si) for thin-film transistors using Raman-scattering spectroscopy, where poly-Si films were fabricated by solid-phase crystallization (SPC) and excimer-laser annealing (ELA). Defects were chara
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::79d7349184d224f4c60de5f9ddc452fa
https://doi.org/10.1143/jjap.42.6742
https://doi.org/10.1143/jjap.42.6742
Publikováno v:
Japanese Journal of Applied Physics. 41:5055-5059
We investigated the tensile stress in poly-Si thin films crystallized by excimer-laser annealing (ELA). The stress was analyzed with the frequency shift of the optical-phonon line, Δω, detected by Raman scattering spectroscopy. The value of Δω is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::efcf26dbbf736adb30b1fb44220ac89d
https://doi.org/10.1143/jjap.41.5055
https://doi.org/10.1143/jjap.41.5055