Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Toshiro K. DOI"'
Autor:
Toshiro K. DOI, Kiyoshi SESHIMO, Tsutomu YAMAZAKI, Masanori OHTSUBO, Hideaki NISHIZAWA, Sachi MURAKAMI, Daizo ICHIKAWA, Yoshio NAKAMURA, Tadakazu MIYASHITA, Yoshihide KAWAMURA, Masataka TAKAGI, Hiroshi KASHIWADA, Hideo AIDA
Publikováno v:
Nihon Kikai Gakkai ronbunshu, Vol 81, Iss 824, Pp 14-00618-14-00618 (2015)
In this study, we propose innovative polishing method for hard-to-process semiconductor substrate such as SiC. Our innovative polishing method mainly consists of 2 technologies. One is unprecedented polishing pad “Dilatancy pad” composed of speci
Externí odkaz:
https://doaj.org/article/1a7f830e563940f191c73d0708c9a60d
Autor:
Toshiro K. Doi
Publikováno v:
The Proceedings of Mechanical Engineering Congress, Japan. 2020:S16302
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ebf19b9d4986a1537d2476fafc50aee9
https://doi.org/10.1299/jsmemecj.2020.s16302
https://doi.org/10.1299/jsmemecj.2020.s16302
Autor:
Hideo Aida, Gill Bukvic, Luiz Eduardo de Angelo Sanchez, Benedito de Moraes Purquerio, Arne Dethlefs, Toshiro K. Doi, Carlos Alberto Fortulan, Qiuyun Huang, Ahmed Bakr Khoshaim, Michael Kleinschnitker, Yin Ling, Ioan D. Marinescu, Osamu Ohnishi, Mariana Pruteanu, Brian Rowe, Christoph Sammler, Nikolas Schröer, Cristian Spanu, Günter Spur, Hirofumi Suzuki, Rainer Telle, Eckart Uhlmann, Michael Weismiller, Hans G. Wobker, Zonghua Xu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2633a6248eb621bd292d318f4c80c765
https://doi.org/10.1016/b978-1-4557-7858-4.00017-0
https://doi.org/10.1016/b978-1-4557-7858-4.00017-0
Autor:
Tsutomu Yamazaki, Toshiro K. Doi, Michio Uneda, Syuhei Kurokawa, Osamu Ohnishi, Kiyoshi Seshimo, Hideo Aida
Publikováno v:
Japanese Journal of Applied Physics. 51:05EF03
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::55ee23dc603ff660f4158c7be643ebaa
https://doi.org/10.7567/jjap.51.05ef03
https://doi.org/10.7567/jjap.51.05ef03
Autor:
Sadahiro Kishii, Ko Nakamura, Kenzo Hanawa, Satoru Watanabe, Yoshihiro Arimoto, Syuhei Kurokawa, Toshiro K. Doi
Publikováno v:
Japanese Journal of Applied Physics. 51:04DB07
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9b7719ca2d629efcb29bbe090d31fca3
https://doi.org/10.7567/jjap.51.04db07
https://doi.org/10.7567/jjap.51.04db07
Autor:
Sadahiro Kishii, Ko Nakamura, Kenzo Hanawa, Satoru Watanabe, Yoshihiro Arimoto, Syuhei Kurokawa, Toshiro K. Doi
Publikováno v:
Japanese Journal of Applied Physics. 51:046506
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::26b4018cfdcb23652310b4e42e91decb
https://doi.org/10.7567/jjap.51.046506
https://doi.org/10.7567/jjap.51.046506
Publikováno v:
Japanese Journal of Applied Physics. 50:076502
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0140e61919e96aa43027cd9a8b9fabb1
https://doi.org/10.7567/jjap.50.076502
https://doi.org/10.7567/jjap.50.076502