Zobrazeno 1 - 10
of 357
pro vyhledávání: '"Toshiro Itani"'
Publikováno v:
Journal of Photopolymer Science and Technology. 35:67-74
Publikováno v:
Advances in Patterning Materials and Processes XL.
Autor:
Masahiko Harumoto, Andreia Figueiredo dos Santos, Julius Joseph Santillan, Toshiro Itani, Takahiro Kozawa
Publikováno v:
Japanese Journal of Applied Physics. 62:SG1037
The effects of photoresist dissolution on randomly occurring (“stochastic”) pattern defects in extreme ultraviolet (EUV) lithography were investigated. Specifically, the effects of the alkali concentration of two developers of different alkyl cha
Autor:
Masahiko Harumoto, Andreia Figueiredo dos Santos, Julius Joseph Santillan, Toshiro Itani, Takahiro Kozawa
Publikováno v:
Japanese Journal of Applied Physics. 62:016503
Patterning targets in leading-edge technologies such as extreme ultraviolet lithography (EUVL) are starting to push present photoresist materials (e.g. chemical amplification resists) to their physical limits. The appearance of randomly occurring (st
Autor:
Tomohiro Motono, Toshiro Itani, Masahiko Harumoto, Masaya Asai, Julius Joseph Santillan, Nakayama Chisayo, Tanaka Yuji
Publikováno v:
Journal of Photopolymer Science and Technology. 32:321-326
Publikováno v:
Journal of Photopolymer Science and Technology. 32:161-167
Publikováno v:
Journal of Photopolymer Science and Technology. 32:355-360
Publikováno v:
Japanese Journal of Applied Physics. 61:056506
Extreme ultraviolet (EUV) lithography is already being applied to the high-volume manufacturing of semiconductor devices. Although EUV lithography has enabled fine pitch scaling, such sub-20 nm order fabrication has also imposed the issue of stochast
Alternative developer solution/process for EUV lithography: ethyltrimethylammonium hydroxide (ETMAH)
Autor:
Masaya Asai, Tanaka Yuji, Julius Joseph Santillan, Harold Stokes, Chisayo Mori, Andreia Figueiredo dos Santos, Toshiro Itani, Tomohiro Motono, Masahiko Harumoto
Publikováno v:
Extreme Ultraviolet (EUV) Lithography XII.
The application of the ethyltrimethylammonium hydroxide (ETMAH) as alternative developer solution for EUV lithography was investigated (compared to the tetramethylammonium hydroxide or TMAH standard developer). Early reports have shown that at a spec
Publikováno v:
Extreme Ultraviolet Lithography 2020.