Zobrazeno 1 - 10
of 193
pro vyhledávání: '"Toshiro Isu"'
Publikováno v:
IEEE Photonics Journal, Vol 5, Iss 3, Pp 6500308-6500308 (2013)
Temporal terahertz waveforms generated from GaAs/AlAs coupled multilayer cavity structures were simulated and compared with experimental results. Femtosecond laser pulses covering two cavity-mode frequencies were used for the difference frequency gen
Externí odkaz:
https://doaj.org/article/7381e8717b934d61a3ade40e02cdf6e1
Publikováno v:
Journal of Crystal Growth. 477:221-224
We have investigated the effects of Sb-soak on InAs quantum dots (QDs) grown on (001) and (113)B GaAs substrates by molecular beam epitaxy. Surface morphologies of the QDs were characterized by atomic force microscopy. The optical properties of burie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::44dc042566d8afc40d0e7c1696dd7966
https://doi.org/10.1016/j.jcrysgro.2017.01.024
https://doi.org/10.1016/j.jcrysgro.2017.01.024
Publikováno v:
Journal of Crystal Growth. 477:249-252
Two-color surface-emitting lasers were fabricated using a GaAs-based coupled multilayer cavity structure grown by molecular beam epitaxy. InGaAs/GaAs multiple quantum wells were introduced only in the upper cavity for two-mode emission in the near-in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::228f137d20fa231def82bc41747c62c6
https://doi.org/10.1016/j.jcrysgro.2017.01.049
https://doi.org/10.1016/j.jcrysgro.2017.01.049
Publikováno v:
IEICE Transactions on Electronics. :171-178
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::faeefed6f1dbb159c02224dbbc3a38af
https://doi.org/10.1587/transele.e100.c.171
https://doi.org/10.1587/transele.e100.c.171
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 126:114478
We determined the lateral mobility of photocarriers and activation energy of the photocurrent (PC) in stacked InAs quantum dot (QD) layers with ultrafast carrier relaxation times and 1.5-μm band absorption. Lateral mobility is one of the important p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::11a891c0f70f08a43e71d9fea35e6706
https://doi.org/10.1016/j.physe.2020.114478
https://doi.org/10.1016/j.physe.2020.114478
Publikováno v:
Journal of Crystal Growth. 425:106-109
Self-assembled InAs quantum dots (QDs), without and with an AlAs cap, were grown on (311)B GaAs substrates by molecular beam epitaxy. Surface morphologies of QDs were characterized by atomic force microscopy. Photoluminescence (PL) was performed in t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a53cda9c3fe0f6bf15818b4bf9f76715
https://doi.org/10.1016/j.jcrysgro.2015.02.074
https://doi.org/10.1016/j.jcrysgro.2015.02.074
Publikováno v:
Journal of Crystal Growth. 425:303-306
InAs quantum dots (QDs) were introduced as efficient nonlinear materials into a GaAs/AlAs coupled multilayer cavity, which was recently demonstrated as a novel THz emission device based on difference-frequency generation (DFG) of the two cavity modes
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::443bda8b9ee38074e647dd3329046e26
https://doi.org/10.1016/j.jcrysgro.2015.03.023
https://doi.org/10.1016/j.jcrysgro.2015.03.023
Publikováno v:
physica status solidi c. 10:1434-1437
Two-color lasing in a GaAs/AlAs coupled multilayer cavity has been studied for a novel type of terahertz emitting devices. In the structure, two cavity layers based on GaAs were connected by the intermediate GaAs/AlAs distributed Bragg reflector mult
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b4f3ad543008bbb4213df5752209359c
https://doi.org/10.1002/pssc.201300205
https://doi.org/10.1002/pssc.201300205
Publikováno v:
Journal of Crystal Growth. 378:485-488
Time-resolved transmission change of Er-doped InAs quantum dots (QDs) embedded in strain-relaxed In0.45Ga0.55As barriers has been studied using different excitation wavelengths (1.4–1.55μm) to understand the QD-size dependence of the photocarrier
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5267121c7019ebad01da3800e534687b
https://doi.org/10.1016/j.jcrysgro.2012.11.005
https://doi.org/10.1016/j.jcrysgro.2012.11.005
Publikováno v:
Extended Abstracts of the 2016 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fa2b459f73c62e57a38a05dc9c401adc
https://doi.org/10.7567/ssdm.2016.e-6-01
https://doi.org/10.7567/ssdm.2016.e-6-01