Zobrazeno 1 - 10
of 58
pro vyhledávání: '"Toshiro Futatsugi"'
Autor:
Toshiro Futatsugi, Takuji Tanaka, Naoki Yokoyama, Kenichi Goto, Naoto Horiguchi, Tatsuya Usuki, Toshihiro Sugii
Publikováno v:
Superlattices and Microstructures. 28:401-406
Direct tunneling memory (DTM) with nano-scale gate oxide accomplished low-voltage operation and full compatible process with MOSFET. DTM has a leakage stop barrier and sidewall control gate (CG) which prevent the overlap between a floating gate (FG)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa8e48662b4ac2d90fbdc25ea717b353
https://doi.org/10.1006/spmi.2000.0940
https://doi.org/10.1006/spmi.2000.0940
Publikováno v:
IEEE Transactions on Electron Devices. 47:2054-2060
A transistor and memory operation of a new AlGaAs/InGaAs heterojunction field-effect transistor (HFET) in a tetrahedral-shaped recess (TSR) on the [111]B GaAs substrate was investigated at a temperature up to 120 K. The TSR-FET memory has a channel o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e35b14cd0bc94de9a9e0822d25e0677
https://doi.org/10.1109/16.877166
https://doi.org/10.1109/16.877166
Autor:
Kazuhito Uchida, Masashi Shima, Takashi Sekiguchi, Yoshiro Sugiyama, Noboru Miura, Naoki Yokoyama, Yoshiki Sakuma, Toshiro Futatsugi, Yuji Awano
Publikováno v:
Journal of Electronic Materials. 28:466-480
Novel semiconductor quantum dots (QDs), grown in tetrahedral-shaped recesses (TSRs) formed on a (111)B GaAs substrate, are described from both material science and device application points of view. After explaining the fabrication procedure for TSRs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e513108a492850d900cc14d72f6e39e7
https://doi.org/10.1007/s11664-999-0097-8
https://doi.org/10.1007/s11664-999-0097-8
Autor:
N. Miura, Yuji Awano, Toshiro Futatsugi, H. Kunimatsu, Kazuhito Uchida, Hisao Nakashima, T. Yasuhira, Naoki Yokoyama, Yoshiki Sakuma, Yasuhiro H. Matsuda
Publikováno v:
Physica B: Condensed Matter. :308-318
We present the recent results of the magneto-optical spectroscopy of low-dimensional excitons in quantum wells (QWs), short period superlattices, quantum wires (QWRs) and quantum dots (QDs) in pulsed high magnetic fields produced by three different t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2eb940505c059a2399eae162e915cf50
https://doi.org/10.1016/s0921-4526(98)00595-x
https://doi.org/10.1016/s0921-4526(98)00595-x
Autor:
Naoki Yokoyama, Toshiro Futatsugi, Anri Nakajima, Hiroshi Nakao, Tatsuya Usuki, Naoto Horiguchi
Publikováno v:
Journal of Applied Physics. 84:1316-1320
We have developed a simple technique for fabricating Sn nanocrystals in thin thermally grown SiO2 layers using low energy ion implantation followed by thermal annealing. The formed Sn nanocrystals have excellent size and depth uniformity. Their avera
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cbec56b5ee95e89e1823f3803f3b2823
https://doi.org/10.1063/1.368199
https://doi.org/10.1063/1.368199
Autor:
Yuji Awano, Naoki Yokoyama, Yoshiaki Nakata, Naoto Horiguchi, Toshiro Futatsugi, Shunichi Muto, Yoshihiro Sugiyama
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 2:632-636
Spectral hole burning of InAs self-assembled quantum dots (QDs) buried in pn-junction was observed for the first time. At 5 K, a narrow hole with width of less than 1 nm was observed and the hole depth increased as electric field increased. The hole
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::12b1479450af450b68939a505c7857a2
https://doi.org/10.1016/s1386-9477(98)00129-5
https://doi.org/10.1016/s1386-9477(98)00129-5
Publikováno v:
Solid-State Electronics. 42:1341-1347
Novel InGaAs quantum dot (QD) structures were fabricated in tetrahedral-shaped recesses (TSRs) formed on a GaAs (111)B substrate using low-pressure metalorganic chemical vapor deposition (MOCVD). The dots were formed in a self-forming manner at the b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::db286be6a18a57b37927576c4549195b
https://doi.org/10.1016/s0038-1101(98)00028-8
https://doi.org/10.1016/s0038-1101(98)00028-8
Publikováno v:
Physica B: Condensed Matter. :247-251
Novel GaAs/InGaAs/GaAs quantum dot (QD) structures in tetrahedral-shaped recesses formed on a (1 1 1) B GaAs substrate are fabricated using metalorganic vapor-phase epitaxy. Magneto-photoluminescence (PL) measurement are performed under pulsed high m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f6d8cd7fa3f93581f16c944188cf848a
https://doi.org/10.1016/s0921-4526(98)00108-2
https://doi.org/10.1016/s0921-4526(98)00108-2
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 4:880-885
Spectral-hole burning of InAs self-assembled quantum dots (QDs) embedded in pin-diode was observed. At 5 K, a narrow hole with width of less than 1 mm was observed and the hole depth increased as electric field increased with the writing light power
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c6d108327c7a2ce23fd7c7a220a22012
https://doi.org/10.1109/2944.735774
https://doi.org/10.1109/2944.735774
Publikováno v:
Journal of Crystal Growth. :713-719
Closely stacked Stranski-Krastanow (SK) growth islands were investigated. InAs islands of nominal 1.8 monolayer thickness were grown periodically with GaAs intermediate layers of less than 3 nm by molecular beam epitaxy. Reflection high-energy ele
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::423c897a8686e3aa9c070da63bf05a25
https://doi.org/10.1016/s0022-0248(96)00814-7
https://doi.org/10.1016/s0022-0248(96)00814-7