Zobrazeno 1 - 10
of 59
pro vyhledávání: '"Toshio Wada"'
Autor:
Sachi Fujiwara, Yuko Nakayama, Atsuto Hosaka, Naoto Shimura, Toshio Wada, Madoka Arisaka, Yoshikazu Nishi, Osamu Arisaka, Keijiro Yabuta
Publikováno v:
Clinical Pediatric Endocrinology. 3:25-29
Autor:
Yukiko Tomioka, Yuki Watanabe, Etsuro Ono, Minako Kuramochi, Keiko Amagai, Toshio Wada, Shigeto Kouda, Masami Morimatsu, Noritaka Kuboki
Publikováno v:
Microbiology and immunology. 53(1)
Nectin-1 is a Ca2+-independent Ig-like cell–cell adhesion molecule and an alphaherpesvirus receptor that binds to virion glycoprotein D by the first Ig-like domain. We have investigated the antiviral potentials of soluble forms of porcine nectin-1
Publikováno v:
Microbiology and Immunology. 26:359-362
Autor:
Toshio Wada
Publikováno v:
Solid-State Electronics. 20:623-627
An electrically reprogrammable read-only-memory (REPROM) device, providing the fully decoded and on-board-writable functions, is described. The device consists of novel N -channel memory transistors with floating gate, non-volatile memory transistors
Publikováno v:
IEEE Journal of Solid-State Circuits. 13:635-639
A fully static 1K bit, TTL compatible, 5-V only MOS RAM has been achieved by using improved process technology and optimized circuit design. Address access time is less than 15 ns and power dissipation is less than 320 mW at room temperature.
Publikováno v:
Journal of The Electrochemical Society. 126:1415-1418
Publikováno v:
IEEE Journal of Solid-State Circuits. 13:600-606
A 64K/spl times/1 bit dynamic RAM based on an innovative short channel ED-MOS process technology and an improved ED-MOS sense amplifier circuit has been realized. The RAM has been designed by using 2-3 /spl mu/m design rules and employing ED-MOS peri
Publikováno v:
Fertility and Sterility. 31:392-395
Attempts were made to isolate mycoplasmas from the uterine cervix of infertile women and normal pregnant and nonpregnant women to investigate the relationship of genital mycoplasma infection to infertility. Ureaplasma urealyticum was demonstrated in
Publikováno v:
IEEE Journal of Solid-State Circuits. 13:235-239
The charge hold-time characteristics of three-transistor-type MOS memory cells were investigated. It was observed that, at first, the holding-node voltage V/SUB G/ decreased slowly, due to junction leakage current. However, when V/SUB G/ reached a va
Publikováno v:
IEEE Journal of Solid-State Circuits. 16:488-491
A 64K/spl times/1 bit fully static MOS-RAM has been fabricated. For the purpose of replacement of 64 kbit dynamic RAM, this static RAM has been designed to be assembled in a standard 300 mil 16 pin DIP. It is the first time address multiplexing has b